12NN10 Description
The UTC 12NN10 is a dual N-Channel enhancement mode power MOSFET, it provides designer with fast switching speed, ruggedized device design, low on-resistance and cost-effectiveness.
12NN10 Key Features
- Low Gate Charge (Typically 14.2nC)
- RDS(ON) < 0.18Ω @ VGS=10V, ID=2.0A
- Fast Switching Speed
- Simple Drive Requirement
- SYMBOL
- ORDERING INFORMATION
- MARKING