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AI2005 - GaAs/SiGe Monolithic Microwave

Features

  • Frequency Band: 24-24.5GHz.
  • >13dBm Max Tx Power.
  • 12dB Tx Power control range.
  • 37dB Rx gain.
  • 24dB Rx gain control range.
  • 11dB Rx SSB NF @ IF≥100kHz, max RF gain.
  • -16dBm IP1dB RF power @ min RF VGA gain.
  • Temperature range from -40°C to +125°C.
  • DC bias: 3.3V / 350mA @ Pout @ stage 8-0.
  • 44L-QFN6X7 SMD leadless package.
  • MSL3 Ref. : AI20051090 - 31 Mar 21 1/18 Subject to change without notice United Monolithic Semiconductors S. A. S. Bât. Char.

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Datasheet Details

Part number AI2005
Manufacturer United Monolithic Semiconductors
File Size 1.38 MB
Description GaAs/SiGe Monolithic Microwave
Datasheet download datasheet AI2005 Datasheet
Additional preview pages of the AI2005 datasheet.

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Full PDF Text Transcription

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AI2005 Advanced Information: AI2005 24GHz 1Tx 4Rx for Automotive/ISM Radar Sensors GaAs/SiGe Monolithic Microwave IC The 24GHz 1 Tx 4Rx is a multifunction chip which integrates a low phase noise VCO, Tx MPA, two double balanced mixer based Rx and a switchable prescaler. The circuit is controlled by SPI and monitored with power and temperature sensor. It is designed for signal generation and reception for ISM radar applications. It is supplied in RoHS compliant SMD package. Main Features ■ Frequency Band: 24-24.5GHz ■ >13dBm Max Tx Power ■ 12dB Tx Power control range ■ 37dB Rx gain ■ 24dB Rx gain control range ■ 11dB Rx SSB NF @ IF≥100kHz, max RF gain ■ -16dBm IP1dB RF power @ min RF VGA gain ■ Temperature range from -40°C to +125°C ■ DC bias: 3.
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