AI2228 - 39.5-42.5GHz Q Band 8W High Power Amplifier

Description

Input RF port DC Gate voltage, 1st & 2st stage, North DC Gate voltage 3d stage, North DC Gate voltage 4th stage, North DC Drain voltage, 1st & 2st stage, North DC Drain voltage 3d stage, North DC Drain voltage 4th stage, North Output RF port DC Drain voltage 4th stage, South DC Drain voltage 3d stag

United Monolithic Semiconductors

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Datasheet Details

Part number	AI2228
Manufacturer	United Monolithic Semiconductors
File Size	844.54 KB
Description	39.5-42.5GHz Q Band 8W High Power Amplifier
Datasheet	AI2228 Datasheet
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AI2228 Advanced Information: AI2228 39.5-42.5GHz Q Band 8W High Power Amplifier GaN Monolithic Microwave IC UMS develops a four stages High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7455-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form. It is well suited for SATCOM downlink and 5G applications. Ref. : AI22283172 - 21 Jun 23 1/8 Subject to change without notice United Monolithic Semiconductors S.A.S. Bât.

Published: Jan 7, 2025 |