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AI2228 - 39.5-42.5GHz Q Band 8W High Power Amplifier

General Description

Input RF port DC Gate voltage, 1st & 2st stage, North DC Gate voltage 3d stage, North DC Gate voltage 4th stage, North DC Drain voltage, 1st & 2st stage, North DC Drain voltage 3d stage, North DC Drain voltage 4th stage, North Output RF port DC Drain voltage 4th stage, South DC Drain voltage 3d stag

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Datasheet Details

Part number AI2228
Manufacturer United Monolithic Semiconductors
File Size 844.54 KB
Description 39.5-42.5GHz Q Band 8W High Power Amplifier
Datasheet download datasheet AI2228 Datasheet

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AI2228 Advanced Information: AI2228 39.5-42.5GHz Q Band 8W High Power Amplifier GaN Monolithic Microwave IC UMS develops a four stages High Power Amplifier operating between 39.5 and 42.5 GHz and providing more than 8W of saturated output power and 24% of power added efficiency. The typical power supply is 20V/290mA (quiescent current). For these supply conditions, the CHA7455-99F provides a junction temperature below 160°C, even in saturation. The circuit is manufactured on a space evaluated 0.15µm gate length GaN-on-SiC HEMT process and is available in bare die form. It is well suited for SATCOM downlink and 5G applications. Ref. : AI22283172 - 21 Jun 23 1/8 Subject to change without notice United Monolithic Semiconductors S.A.S. Bât.