CHA2066-99F Overview
The CHA2066-99F is a two-stage wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.
CHA2066-99F Key Features
- Broad band performance 10-16GHz
- 2.0dB noise figure, 10-16GHz
- 16dB gain, 0.5dB gain flatness
- Low DC power consumption, 50mA
- 20dBm 3rd order intercept point
- Chip size: 1,52 x 1,08 x 0.1mm
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE