Datasheet Summary
10-16GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA2066-99F is a two-stage wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.
It is supplied in chip form.
G1 7272
NC G2 Vd
RFout
Main Features
B C D E NC
- Broad band performance 10-16GHz
- 2.0dB noise figure, 10-16GHz
- 16dB gain, 0.5dB gain flatness
- Low DC power consumption, 50mA
- 20dBm 3rd order intercept point
- Chip size: 1,52 x 1,08 x 0.1mm
On wafer typical measurements.
Main Characteristics
Tamb = +25°C
Symbol
Parameter
Mi...