CHA2066-99F Datasheet Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA2066-99F 10-16GHz Low Noise Amplifier GaAs Monolithic Microwave.

Datasheet Details

Part number	CHA2066-99F
Manufacturer	United Monolithic Semiconductors
File Size	410.62 KB
Description	Low Noise Amplifier
Datasheet	CHA2066-99F-UnitedMonolithicSemiconductors.pdf

General Description

The CHA2066-99F is a two-stage wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.

It is supplied in chip form.

Key Features

A B C D E NC.
Broad band performance 10-16GHz.
2.0dB noise figure, 10-16GHz.
16dB gain,  0.5dB gain flatness.
Low DC power consumption, 50mA.
20dBm 3rd order intercept point.
Chip size: 1,52 x 1,08 x 0.1mm On wafer typical measurements. Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max NF Noise figure, 10-16GHz 2.0 2.5 G Gain 14 16 G Gain flatness  0.5  1.0 ESD Protections : Electrostatic discharge sensitive device observe handling.

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