CHA2090-99F
CHA2090-99F is 17-24GHz Low Noise Amplifier manufactured by United Monolithic Semiconductors.
Description
The CHA2090-99F is a three-stage selfbiased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard 0.25µm gate length p HEMT process, via holes through the substrate, air bridges and electron beam gate lithography.
It is supplied in chip form.
Gain ( d B ) NF ( d B )
Main Features
- Broadband performance 17-24GHz
- 2.0d B noise figure
- 23d B gain, 1d B gain flatness
- Low DC power consumption, 55m A
- Chip size: 2,17 x 1,27 x 0.1mm
5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35
Frequency ( GHz )
On wafer typical measurement
Main Characteristics
Tamb = +25°C, Vd=4.5V, Pads B,D,E=GND
Symbol
Parameter
Min Typ Max
Fop Operating frequency range
NF Noise figure
2.0...
