• Part: CHA2098b99F
  • Description: 20-40GHz High Gain Buffer Amplifier
  • Manufacturer: United Monolithic Semiconductors
  • Size: 205.27 KB
Download CHA2098b99F Datasheet PDF
United Monolithic Semiconductors
CHA2098b99F
CHA2098b99F is 20-40GHz High Gain Buffer Amplifier manufactured by United Monolithic Semiconductors.
Description The CHA2098b99F is a high gain broadband three-stage monolithic buffer amplifier. It is Vd1 Vd2,3 designed for a wide range of applications, from military to mercial munication systems. The backside of the chip is both RF IN OUT and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Vg1 Vg2 Vg3 It is available in chip form. Main Features Typical on wafer measurement - Broadband performances: 20-40GHz - 16d Bm output power (1d B gain p) - 19d B 1.5d B gain - Low DC power consumption, 150m A @ 3.5V - Chip size: 1.67 X 0.97 X 0.10mm Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range G Small signal gain P1d B Output power at 1d B gain pression Id Bias current 150 200 ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Unit GHz d B d Bm m A Ref. : DSCHA2098b0301 - 27 Oct 20 1/8 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Bât. Charmille - Parc...