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CHA2157-99F - Medium Power Amplifier

Datasheet Summary

Description

The CHA2157-99F is a two stage low noise and medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounded.

Features

  • 3.5 dB noise figure.
  • 10 dB  1dB gain.
  • 15 dBm output power @ -1dB gain comp.
  • DC power consumption, 80mA @ 3.3V.
  • Chip size: 1.71 x 1.04 x 0.10 mm Gain & Rloss (dB) 15 10 5 0 -5 -10 -15 -20 55 Gain S11 56 57 58 Frequency (GHz) S22 59 60 Typical on wafer measurement Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range 55 60 G Small signal gain 8 10 12 NF Noise figure 3.5 4.5 P1dB Output power at 1dB gain compressi.

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Datasheet Details

Part number CHA2157-99F
Manufacturer United Monolithic Semiconductors
File Size 393.00 KB
Description Medium Power Amplifier
Datasheet download datasheet CHA2157-99F Datasheet
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Full PDF Text Transcription

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CHA2157-99F 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2157-99F is a two stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ 3.5 dB noise figure ■ 10 dB  1dB gain ■ 15 dBm output power @ -1dB gain comp. ■ DC power consumption, 80mA @ 3.3V ■ Chip size: 1.71 x 1.04 x 0.
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