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CHA2157-99F Datasheet Medium Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA2157-99F 55-60GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave.

General Description

The CHA2157-99F is a two stage low noise and medium power amplifier.

It is designed for a wide range of applications, from military to mercial munication systems.

The backside of the chip is both RF and DC grounded.

Key Features

  • 3.5 dB noise figure.
  • 10 dB  1dB gain.
  • 15 dBm output power @ -1dB gain comp.
  • DC power consumption, 80mA @ 3.3V.
  • Chip size: 1.71 x 1.04 x 0.10 mm Gain & Rloss (dB) 15 10 5 0 -5 -10 -15 -20 55 Gain S11 56 57 58 Frequency (GHz) S22 59 60 Typical on wafer measurement Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range 55 60 G Small signal gain 8 10 12 NF Noise figure 3.5 4.5 P1dB Output power at 1dB gain compressi.

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