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CHA2159-99F - Low Noise / Medium Power Amplifier

Datasheet Summary

Description

The CHA2159 is a four - stage low noise and medium power amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounded.

Features

  • 4.0 dB noise figure.
  • 20 dB gain.
  • 14 dBm output power (-1dB gain comp. ).
  • DC power consumption, 115mA @ 3.5V.
  • Chip size: 2.35 x 1.11 x 0.10 mm Gain & RLosses (dB) 22 20 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 -8 -10 -12 -14 55 dBS11 dBS22 dBS21 NF Typ. 60 65 Frequency (GHz) Typical on wafer measurment Main Characteristics Tamb = +25°C, Vd = 3.5V Symbol Parameter Min Typ Max Unit Fop Operating frequency range 55 65 GHz G Small signal gain 18 20 dB NF Nois.

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Datasheet Details

Part number CHA2159-99F
Manufacturer United Monolithic Semiconductors
File Size 259.96 KB
Description Low Noise / Medium Power Amplifier
Datasheet download datasheet CHA2159-99F Datasheet
Additional preview pages of the CHA2159-99F datasheet.

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Full PDF Text Transcription

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CHA2159-99F 55-65GHz Low Noise / Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA2159 is a four - stage low noise and medium power amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounded. This simplifies the assembly process. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features ■ 4.0 dB noise figure ■ 20 dB gain ■ 14 dBm output power (-1dB gain comp.) ■ DC power consumption, 115mA @ 3.5V ■ Chip size: 2.35 x 1.11 x 0.
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