Datasheet Details
| Part number | CHA2190-99F |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 307.50 KB |
| Description | Low Noise Amplifier |
| Datasheet |
 CHA2190-99F Datasheet
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General Description
The circuit is a two-stages self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
Key Features
- Broad band performance 20-30GHz.
- 2.2dB noise figure.
- 15dB gain, 0.5dB gain flatness.
- Low DC power consumption, 50mA.
- 20dBm 3rd order intercept point.
- Chip size : 1.670 x 1.03x 0.1mm dBSij & NF ( dB ) 18 14 10 6 2 -2 -6 dBS11 dBS21 dBS22 NF -10 -14 -18 -22 -26 14 16 18 20 22 24 26 28 30 32 34 36 Frequency ( GHz ) On wafer typical measurement Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max Unit NF Noise figure at freq : 40GHz 2.