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CHA2190-99F - Low Noise Amplifier

Datasheet Summary

Description

The circuit is a two-stages self biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Features

  • Broad band performance 20-30GHz.
  • 2.2dB noise figure.
  • 15dB gain,  0.5dB gain flatness.
  • Low DC power consumption, 50mA.
  • 20dBm 3rd order intercept point.
  • Chip size : 1.670 x 1.03x 0.1mm dBSij & NF ( dB ) 18 14 10 6 2 -2 -6 dBS11 dBS21 dBS22 NF -10 -14 -18 -22 -26 14 16 18 20 22 24 26 28 30 32 34 36 Frequency ( GHz ) On wafer typical measurement Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max Unit NF Noise figure at freq : 40GHz 2.

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Datasheet Details

Part number CHA2190-99F
Manufacturer United Monolithic Semiconductors
File Size 307.50 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA2190-99F Datasheet
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Full PDF Text Transcription

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CHA2190-99F 20-30GHz Low Noise Amplifier Self biased Description GaAs Monolithic Microwave IC The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features  Broad band performance 20-30GHz  2.2dB noise figure  15dB gain,  0.5dB gain flatness  Low DC power consumption, 50mA  20dBm 3rd order intercept point  Chip size : 1.670 x 1.03x 0.
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