CHA2190-99F Description
GaAs Monolithic Microwave IC The circuit is a two-stages self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
CHA2190-99F Key Features
- Broad band performance 20-30GHz
- 2.2dB noise figure
- 15dB gain, 0.5dB gain flatness
- Low DC power consumption, 50mA
- 20dBm 3rd order intercept point
- Chip size : 1.670 x 1.03x 0.1mm
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE