CHA2190-99F
CHA2190-99F is Low Noise Amplifier manufactured by United Monolithic Semiconductors.
20-30GHz Low Noise Amplifier
Self biased
Description
GaAs Monolithic Microwave IC
The circuit is a two-stages self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form.
Main Features
- Broad band performance 20-30GHz
- 2.2dB noise figure
- 15dB gain, 0.5dB gain flatness
- Low DC power consumption, 50mA
- 20dBm 3rd order intercept point
- Chip size : 1.670 x 1.03x 0.1mm dBSij & NF ( dB )
-2
-6 dBS11 dBS21 dBS22
-10
-14
-18
-22
-26 14 16 18 20 22 24 26 28 30...
