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CHA2190-99F Datasheet Low Noise Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA2190-99F 20-30GHz Low Noise Amplifier Self biased.

General Description

GaAs Monolithic Microwave IC The circuit is a two-stages self biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

It is supplied in chip form.

Key Features

  • Broad band performance 20-30GHz.
  • 2.2dB noise figure.
  • 15dB gain,  0.5dB gain flatness.
  • Low DC power consumption, 50mA.
  • 20dBm 3rd order intercept point.
  • Chip size : 1.670 x 1.03x 0.1mm dBSij & NF ( dB ) 18 14 10 6 2 -2 -6 dBS11 dBS21 dBS22 NF -10 -14 -18 -22 -26 14 16 18 20 22 24 26 28 30 32 34 36 Frequency ( GHz ) On wafer typical measurement Main Characteristics Tamb = +25°C Symbol Parameter Min Typ Max Unit NF Noise figure at freq : 40GHz 2.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA2190 20-30GHz Low Noise Amplifier
CHA2192 24-26.5GHz Low Noise Amplifier
CHA2193 20-30GHz Low Noise Amplifier
CHA2193-99F 20-30GHz Low Noise Amplifier
CHA2194 36-44GHz Low Noise Amplifier
CHA2194-99F Low Noise Amplifier
CHA2110-98F 7-12GHz LNA
CHA2110-QDG GaAs Monolithic Microwave
CHA2157 55-60GHz Low Noise / Medium Power Amplifier
CHA2157-99F Medium Power Amplifier

CHA2190-99F Distributor