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CHA2193-99F - 20-30GHz Low Noise Amplifier

General Description

The CHA2193-99F is a three stages low noise amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

The backside of the chip is both RF and DC grounds.

Key Features

  • 2.0 dB noise figure.
  • 18 dB  1dB gain.
  • 8 dBm output power (-1dB gain comp. ).
  • Very good broadband input matching.
  • DC power consumption, 60mA @ 3.5V.
  • Chip size : 2.07 x 1.03 x 0.10 mm 20 18 Gain (dB) 16 14 12 10 8 6 4 NF (dB) 2 0 20 21 22 23 24 25 26 27 28 29 30 31 32 33 Frequency ( GHz ) Typical on-wafer measurement Main Characteristics Tamb. = +25°C Tamb. = 25°C Symbol Parameter Min Typ Max Unit Fop Operating frequency range 20 30 GHz G Sma.

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Datasheet Details

Part number CHA2193-99F
Manufacturer United Monolithic Semiconductors
File Size 242.99 KB
Description 20-30GHz Low Noise Amplifier
Datasheet download datasheet CHA2193-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2193-99F 20-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA2193-99F is a three stages low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ 2.0 dB noise figure ■ 18 dB  1dB gain ■ 8 dBm output power (-1dB gain comp.) ■ Very good broadband input matching ■ DC power consumption, 60mA @ 3.5V ■ Chip size : 2.07 x 1.03 x 0.