CHA2194-99F Datasheet | United Monolithic Semiconductors

36-44GHz Low Noise Amplifier Self biased GaAs Monolithic Microwave IC Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint munication . The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in chip form. Main Features - Broad band performance 36-44GHz - 3dB noise figure - 19dB gain, ± 0.5dB gain flatness - Low DC power consumption, 45mA - 20dBm 3rd order intercept point - Chip size : 1.670 x 1.030 x 0.1mm 25,00 15,00...