CHA2194-99F
Overview
The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
- Broad band performance 36-44GHz
- 3dB noise figure
- 19dB gain, ± 0.5dB gain flatness
- Low DC power consumption, 45mA
- 20dBm 3rd order intercept point
- Chip size : 1.670 x 1.030 x 0.1mm 28 25,00 26 24 22 20 18 15,00 16 14 12 10 8 5,00 6 4 2 0 -2 -5,00 -4 -6 -8 -10 -12 -15,00 -14 -16 -18 dBS21 NF dBS11 dBS22 -20 -22 -25,00
