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CHA2293-99F - Variable Gain Amplifier

General Description

The CHA2293-99F is a high gain four-stage monolithic low noise amplifier with variable gain.

It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded.

This helps simplify the assembly process.

Key Features

  • Frequency range : 24-30GHz.
  • 3dB Noise Figure.
  • 24dB gain.
  • Gain control range: 15dB.
  • Low DC power consumption, 160mA @ 5V.
  • Chip size : 2.32 X 1.23 X 0.10 mm Typical on wafer measurements :Gain & NF 28 26 24 22 20 Gain (dB) 18 16 14 12 10 8 6 NF (dB) 4 2 0 24 25 26 27 28 29 30 Frequency (GHz) Main Characteristics Tamb. = 25°C Parameter Fop Operating frequency range G Small signal gain Min Typ Max 24 30 24 NF Noise figure 3 3.5 G.

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Datasheet Details

Part number CHA2293-99F
Manufacturer United Monolithic Semiconductors
File Size 268.44 KB
Description Variable Gain Amplifier
Datasheet download datasheet CHA2293-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2293-99F 24-30GHz Low Noise, Variable Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2293-99F is a high gain four-stage monolithic low noise amplifier with variable gain. It is designed for a wide range of applications, from military to commercial communication systems.The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features  Frequency range : 24-30GHz  3dB Noise Figure.  24dB gain  Gain control range: 15dB  Low DC power consumption, 160mA @ 5V  Chip size : 2.32 X 1.23 X 0.