CHA2352-98F Datasheet PDF - United Monolithic Semiconductors Low Noise Amplifier Specs

CHA2352-98F - Low Noise Amplifier

Datasheet Summary

Description

The CHA2352-98F is a three stage monolithic Low Noise Amplifier, which produces 21dB linear gain with 20dB Adjustable Gain Control (AGC) and 3.5dB Noise Figure in the frequency band 4652GHz.

It includes ESD protections on each RF access and DC pads.

Features

Broadband performances: 46-52GHz.
Low Noise Figure: 3.5dB.
12dBm Pout@1db compression for input power ≥-10dBm.
High Gain: 21dB.
BCB Layer protection.
Typical DC bias: Vd=3.3V@Id=55mA.
Chip size 2x1.2x0.07mm Typical S parameters and Noise Figure Main Electrical Characteristics Tamb. = +25°C, Vd(D) = 3.3V,VG(G1=G2=G3) =0V Symbol Freq Gain NF Pout Parameter Frequency range Linear Gain Noise Figure Output Power @1dB comp. Min Typ Max Unit 46 52 GHz 21 dB 3.5 dB.

Datasheet Details

Part number	CHA2352-98F
Manufacturer	United Monolithic Semiconductors
File Size	919.36 KB
Description	Low Noise Amplifier
Datasheet	CHA2352-98F Datasheet
Additional preview pages of the CHA2352-98F datasheet.

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Full PDF Text Transcription

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CHA2352-98F 46-52GHz Low Noise Amplifier with AGC GaAs Monolithic Microwave IC Description The CHA2352-98F is a three stage monolithic Low Noise Amplifier, which produces 21dB linear gain with 20dB Adjustable Gain Control (AGC) and 3.5dB Noise Figure in the frequency band 4652GHz. It includes ESD protections on each RF access and DC pads. This amplifier is designed for a wide range of applications, from Commercial to Space communication systems. It is manufactured with a pHEMT process, 0.1µm gate length, via holes through the substrate, air bridges and electron beam gate lithography and is available in bare die with BCB layer protection. Main Features ■Broadband performances: 46-52GHz ■Low Noise Figure: 3.

Published: Jan 26, 2025 |