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CHA2394-99F - 36-40GHz Very Low Noise High Gain Amplifier

General Description

The CHA2394-99F is a three-stage monolithic low noise amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

Key Features

  • Broadband performances: 36-40GHz.
  • 2.5dB Noise Figure.
  • 21dB gain.
  • 1.5dB gain flatness.
  • Low DC power consumption, 60mA@3.5V.
  • Chip size: 1.72 X 1.08 X 0.10 mm Typical on wafer measurements 22 4 20 3,5 18 3 16 2,5 14 2 12 1,5 10 1 30 31 32 33 34 35 36 37 38 39 40 Frequency (GHz) Gain (dB) NF (dB) Main Electrical Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range 36 40 G Small signal gain 18 21 P1dB Outp.

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Datasheet Details

Part number CHA2394-99F
Manufacturer United Monolithic Semiconductors
File Size 203.63 KB
Description 36-40GHz Very Low Noise High Gain Amplifier
Datasheet download datasheet CHA2394-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2394-99F 36-40GHz Very Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2394-99F is a three-stage monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. Vds Vds The circuit is manufactured with a pHEMT IN OUT process 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vgs1&2 Vgs3 Main Features ■ Broadband performances: 36-40GHz ■ 2.5dB Noise Figure ■ 21dB gain ■ 1.5dB gain flatness ■ Low DC power consumption, 60mA@3.5V ■ Chip size: 1.72 X 1.08 X 0.