Datasheet4U Logo Datasheet4U.com

CHA2411-QDG - Low Noise Amplifier

Datasheet Summary

Description

The CHA2411-QDG is a K-band low noise amplifier providing 26dB gain with a noise figure of 2.5dB from a single bias supply +5V.

The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Features

  • Broadband performances: 20-25GHz.
  • Excellent 2.5dB Noise figure.
  • 26dB  2dB stable Gain vs Temperature.
  • DC bias: Vd=5.0 Volt @ +I=43mA.
  • 24L-QFN4x4 SMD leadless package.
  • MSL1 S21(dB) Functional diagram CHA2411QDG - Lot 1004GA S21(dB) Gain versus frequency 30 -40°C 28 +25°C 26 +105°C 24 22 20 18 16 14 12 10 16 17 18 19 20 21 22 23 24 25 26 Frequency (GHz) Main Characteristics Tamb. = +25°C Symbol Parameter Fop Frequency range G Linear.

📥 Download Datasheet

Datasheet preview – CHA2411-QDG

Datasheet Details

Part number CHA2411-QDG
Manufacturer United Monolithic Semiconductors
File Size 703.58 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA2411-QDG Datasheet
Additional preview pages of the CHA2411-QDG datasheet.

📁 Similar Datasheet

  • CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)
  • CHA441 - Hall-effect sensor (Cosemitech)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHA2411-QDG 20-25GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2411-QDG is a K-band low noise amplifier providing 26dB gain with a noise figure of 2.5dB from a single bias supply +5V. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. UMSS AA3264681781A YYYYWWWWG Main Features ■ Broadband performances: 20-25GHz ■ Excellent 2.5dB Noise figure ■ 26dB  2dB stable Gain vs Temperature ■ DC bias: Vd=5.
Published: |