CHA2441-QAG Datasheet PDF - United Monolithic Semiconductors 22-26GHz Low Noise Amplifier Specs

CHA2441-QAG - 22-26GHz Low Noise Amplifier

Datasheet Summary

Description

The CHA2441-QAG is a K-band low noise amplifier providing 25.5dB gain from a single bias supply +3.3V with a noise figure of 2.5dB.

All the active devices are self biased on chip.

The circuit is manufactured with a pHEMT process 0.25μm.

Features

22-26GHz Bandwith.
excellent 2.5dB Noise Figure.
25.5dB Gain.
DC bias: Vd=3.3Volt@Id=50mA.
16L-QFN3x3.
MSL1 -40°C +25°C +105°C S21 versus frequency and temperature Main Electrical Characteristics Tamb. = +25°C; Vd=+3.3V Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pin-1dB Input Power @1dB comp. Min Typ Max Unit 22 26 GHz 25.5 dB 2.5 dB -14 dBm Ref. : DSCHA2441-QAG0301 - 27 Oct 20 1/10 Specifications subject to change w.

Datasheet Details

Part number	CHA2441-QAG
Manufacturer	United Monolithic Semiconductors
File Size	738.87 KB
Description	22-26GHz Low Noise Amplifier
Datasheet	CHA2441-QAG Datasheet
Additional preview pages of the CHA2441-QAG datasheet.

📁 Similar Datasheet

CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)

CHA441 - Hall-effect sensor (Cosemitech)

Full PDF Text Transcription

Click to expand full text

CHA2441-QAG 22-26GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2441-QAG is a K-band low noise amplifier providing 25.5dB gain from a single bias supply +3.3V with a noise figure of 2.5dB. All the active devices are self biased on chip. The circuit is manufactured with a pHEMT process 0.25μm. It is supplied in RoHS compliant SMD package. UMS AA3264684781A YYYYWWWWG Main Features ■ 22-26GHz Bandwith ■ excellent 2.5dB Noise Figure ■ 25.5dB Gain ■ DC bias: Vd=3.3Volt@Id=50mA ■ 16L-QFN3x3 ■ MSL1 -40°C +25°C +105°C S21 versus frequency and temperature Main Electrical Characteristics Tamb.= +25°C; Vd=+3.3V Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pin-1dB Input Power @1dB comp.

Published: Feb 2, 2016 |