Datasheet4U Logo Datasheet4U.com

CHA2494-QEG - 34-44GHz Low Noise Amplifier

General Description

The CHA2494-QEG is a wide band monolithic low noise amplifier.

It is designed for a wide range of applications, from military to commercial communication systems.

Key Features

  • Broadband performances: 34-44GHz.
  • 3dB noise figure.
  • 22dB gain.
  • 20dBm Output IP3.
  • DC bias: Vd=4V @ Id=80mA.
  • 24L-QFN4x5.
  • MSL1 Main Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure OIP3 3rd order intercept point Min Typ Max Unit 34 44 GHz 22 dB 3 dB 20 dBm Ref. : DSCHA2494-QEG0301 - 27 Oct 20 1/14 Specifications subject to change without notice United Monolithic Semiconductors S. A. S. Bât. Ch.

📥 Download Datasheet

Datasheet Details

Part number CHA2494-QEG
Manufacturer United Monolithic Semiconductors
File Size 688.26 KB
Description 34-44GHz Low Noise Amplifier
Datasheet download datasheet CHA2494-QEG Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CHA-20NF (CHA-20xx) Coaxial Attenuators Component General
CHA-20NM (CHA-20xx) Coaxial Attenuators Component General
CHA-20NMF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SF (CHA-20xx) Coaxial Attenuators Component General
CHA-20SM (CHA-20xx) Coaxial Attenuators Component General

Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHA2494-98F 34-44GHz Low Noise Amplifier
CHA2411-QDG Low Noise Amplifier
CHA2441-QAG 22-26GHz Low Noise Amplifier
CHA2050-QDG Low Noise Amplifier
CHA2063A 7-13GHz Low Noise Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHA2494-QEG 34-44GHz Low Noise Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA2494-QEG is a wide band monolithic low noise amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is supplied in RoHS compliant SMD package. Main Features ■ Broadband performances: 34-44GHz ■ 3dB noise figure ■ 22dB gain ■ 20dBm Output IP3 ■ DC bias: Vd=4V @ Id=80mA ■ 24L-QFN4x5 ■ MSL1 Main Characteristics Tamb.