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CHA2595-98F - Low Noise Amplifier

General Description

This circuit is a wide band monolithic Low Noise Amplifier with state of the art wide band, low noise and adjustable gain performance.

It is designed for a wide range of applications, from military to commercial communication and test instrumentation systems.

Key Features

  • Broadband performances: 27.5-43.5GHz.
  • Typical Linear Gain:19.5dB.
  • Typical Noise Figure: 2dB.
  • P1dB: 11dBm.
  • Psat: 12dBm.
  • OIP3: >20dBm.
  • DC bias: Vd=3.3V@Id=61mA.
  • Size : 2350 x 1150 µm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure P1dB Output Power @1dB gain comp. Min Typ Max Unit 27.5 43.5 GHz 18 19.5 dB 2 2.4 dB 8 11 13.5 dBm Ref. : DSCHA25951168 - 17 Jun 21 1/14 Specif.

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Datasheet Details

Part number CHA2595-98F
Manufacturer United Monolithic Semiconductors
File Size 505.70 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA2595-98F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA2595-98F 27.5-43.5GHz Low Noise Amplifier GaAs Monolithic Microwave IC in bare die Description This circuit is a wide band monolithic Low Noise Amplifier with state of the art wide band, low noise and adjustable gain performance. It is designed for a wide range of applications, from military to commercial communication and test instrumentation systems. It is manufactured with a successfully space evaluated pHEMT process, 100nm gate length, via holes through the substrate, air bridges and electron beam gate lithography. ESD protection on DC/RF is included in the product. Main Features ■ Broadband performances: 27.5-43.5GHz ■ Typical Linear Gain:19.5dB ■ Typical Noise Figure: 2dB ■ P1dB: 11dBm ■ Psat: 12dBm ■ OIP3: >20dBm ■ DC bias: Vd=3.