Datasheet4U Logo Datasheet4U.com

CHA2595-98F - Low Noise Amplifier

Datasheet Summary

Description

This circuit is a wide band monolithic Low Noise Amplifier with state of the art wide band, low noise and adjustable gain performance.

It is designed for a wide range of applications, from military to commercial communication and test instrumentation systems.

Features

  • Broadband performances: 27.5-43.5GHz.
  • Typical Linear Gain:19.5dB.
  • Typical Noise Figure: 2dB.
  • P1dB: 11dBm.
  • Psat: 12dBm.
  • OIP3: >20dBm.
  • DC bias: Vd=3.3V@Id=61mA.
  • Size : 2350 x 1150 µm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure P1dB Output Power @1dB gain comp. Min Typ Max Unit 27.5 43.5 GHz 18 19.5 dB 2 2.4 dB 8 11 13.5 dBm Ref. : DSCHA25951168 - 17 Jun 21 1/14 Specif.

📥 Download Datasheet

Datasheet preview – CHA2595-98F

Datasheet Details

Part number CHA2595-98F
Manufacturer United Monolithic Semiconductors
File Size 505.70 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA2595-98F Datasheet
Additional preview pages of the CHA2595-98F datasheet.

📁 Similar Datasheet

  • CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)
  • CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)
  • CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)
  • CHA441 - Hall-effect sensor (Cosemitech)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHA2595-98F 27.5-43.5GHz Low Noise Amplifier GaAs Monolithic Microwave IC in bare die Description This circuit is a wide band monolithic Low Noise Amplifier with state of the art wide band, low noise and adjustable gain performance. It is designed for a wide range of applications, from military to commercial communication and test instrumentation systems. It is manufactured with a successfully space evaluated pHEMT process, 100nm gate length, via holes through the substrate, air bridges and electron beam gate lithography. ESD protection on DC/RF is included in the product. Main Features ■ Broadband performances: 27.5-43.5GHz ■ Typical Linear Gain:19.5dB ■ Typical Noise Figure: 2dB ■ P1dB: 11dBm ■ Psat: 12dBm ■ OIP3: >20dBm ■ DC bias: Vd=3.
Published: |