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CHA3023-99F - WIDE BAND AMPLIFIER

General Description

The CHA3023-99F is a travelling wave amplifier using cascode FET.

It is designed for a wide range of applications.

The circuit is manufactured with a pHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form.

Key Features

  • Broadband performances: 1-18GHz.
  • 14dB gain.
  • 3dB typical Low Noise Figure.
  •  0.7dB gain flatness.
  • Chip size: 2.15 X 1.42 X 0.10mm Gain & RLoss 15 10 dBS21 5 0 -5 -10 dBS11 -15 dBS22 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Fop Operating frequency range G Small signal Gain NF Noise figure Id Bias current Min Typ Max Unit 1 18 GHz 12.5 14 4 dB 95 mA ESD Protection: Electrostatic d.

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Datasheet Details

Part number CHA3023-99F
Manufacturer United Monolithic Semiconductors
File Size 665.47 KB
Description WIDE BAND AMPLIFIER
Datasheet download datasheet CHA3023-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA3023-99F 1-18GHz WIDE BAND AMPLIFIER GaAs Monolithic Microwave IC Description The CHA3023-99F is a travelling wave amplifier using cascode FET. It is designed for a wide range of applications. The circuit is manufactured with a pHEMT process of 0.25µm gate length, via holes through the substrate and air bridges and it is available in die form. Main Features ■ Broadband performances: 1-18GHz ■ 14dB gain ■ 3dB typical Low Noise Figure ■  0.7dB gain flatness ■ Chip size: 2.15 X 1.42 X 0.10mm Gain & RLoss 15 10 dBS21 5 0 -5 -10 dBS11 -15 dBS22 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Fop Operating frequency range G Small signal Gain NF Noise figure Id Bias current Min Typ Max Unit 1 18 GHz 12.