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CHA3218-99F - 2-18GHz Low Noise Amplifier

Datasheet Summary

Description

The CHA3218-99F is a two stage very wide band Low Noise Amplifier.

The wide frequency band associated to a 2dB low noise figure makes this circuit very versatile for very high performance systems.

It is designed for a wide range of applications, from military to commercial communication systems.

Features

  • Broadband performances: 2-18GHz.
  • Noise figure : 2dB.
  • Output power: 15dBm @ 1dBcomp.
  • Linear gain: 24dB.
  • High linearity: 25dBm.
  • Quiescent bias point: Vd=4V, Id=120mA.
  • Chip size 3.07x1.57x0.1mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Min Typ Max Unit 2 18 GHz 24 dB 2 dB 15 dBm Ref. : DSCHA32180301 - 27 Oct 20 1/10 Specifications subject to.

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Datasheet Details

Part number CHA3218-99F
Manufacturer United Monolithic Semiconductors
File Size 645.58 KB
Description 2-18GHz Low Noise Amplifier
Datasheet download datasheet CHA3218-99F Datasheet
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CHA3218-99F 2-18GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3218-99F is a two stage very wide band Low Noise Amplifier. The wide frequency band associated to a 2dB low noise figure makes this circuit very versatile for very high performance systems. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg1 Vg2 Vd1 Vd2 IN OUT Main Features ■ Broadband performances: 2-18GHz ■ Noise figure : 2dB ■ Output power: 15dBm @ 1dBcomp ■ Linear gain: 24dB ■ High linearity: 25dBm ■ Quiescent bias point: Vd=4V, Id=120mA ■ Chip size 3.07x1.57x0.
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