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CHA3395-98F - Medium Power Amplifier

General Description

The CHA3395-98F is a 3 stages monolithic Medium Power Amplifier, which produces 24dB gain for 20 dBm output power at 1dB compression.

It is designed for a wide range of applications, from space to commercial communication systems.

Key Features

  • Broadband performances: 21-30GHz.
  • 20dBm Pout at 1dB compression.
  • 24dB gain.
  • 32dBm OTOI.
  • DC bias: Vd= 4.0V, Id= 180mA.
  • Chip size 1.5x2.5x0.1mm Output Power (dBm), PAE (%) 30 28 P1dB 26 Psat 24 PAE Sat 22 20 18 16 14 12 10 21 22 23 24 25 26 27 28 29 30 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power @1dB comp. OTOI 3rd order Intercept point Min Typ Max Unit.

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Datasheet Details

Part number CHA3395-98F
Manufacturer United Monolithic Semiconductors
File Size 244.82 KB
Description Medium Power Amplifier
Datasheet download datasheet CHA3395-98F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA3395-98F 21-30GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA3395-98F is a 3 stages monolithic Medium Power Amplifier, which produces 24dB gain for 20 dBm output power at 1dB compression. RFIN It is designed for a wide range of applications, from space to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vd1 Vd2 Vd3 VG1 VG2 VG3 RFOUT Main Features ■ Broadband performances: 21-30GHz ■ 20dBm Pout at 1dB compression ■ 24dB gain ■ 32dBm OTOI ■ DC bias: Vd= 4.0V, Id= 180mA ■ Chip size 1.5x2.5x0.