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CHA3409-98F - 25-45GHz Driver

Datasheet Summary

Description

23dB linear gain and 19dBm output power.

technology variations.

Features

  • Broadband performances: 25-45GHz.
  • 19dBm Pout at 1dB compression.
  • 23dB linear gain.
  • 19% of PAE @ 1dBc.
  • DC bias: Vd=4Volt @ Id=100mA.
  • Chip size 2x1.3x0.1 (mm) Output power & PAE vs frequency 23 34 22 32 21 30 20 28 19 26 18 24 17 22 16 20 15 18 14 16 13 Pout @2dBm P1dBc PAE@2dBm 14 12 12 24 26 28 30 32 34 36 38 40 42 44 46 Frequency (GHz) Main Electrical Characteristics Tamb = +25°C, Vgstg1=-4V, Vd=4V, Idq=100mA Symbol Freq Gain P-1dB P.

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Datasheet preview – CHA3409-98F

Datasheet Details

Part number CHA3409-98F
Manufacturer United Monolithic Semiconductors
File Size 703.43 KB
Description 25-45GHz Driver
Datasheet download datasheet CHA3409-98F Datasheet
Additional preview pages of the CHA3409-98F datasheet.

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Full PDF Text Transcription

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CHA3409-98F 25-45GHz Driver GaAs Monolithic Microwave IC in bare die Description The CHA3409-98F is a 3 stage monolithic Medium Power Amplifier, which produces 23dB linear gain and 19dBm output power. It includes a self-biasing on the first stage, VD1 VD23 which reduces the impact of temperature and IN OUT technology variations. It is well suited for a wide range of application from military to commercial communication systems and test instrumentation. This product is manufactured with a pHEMT GM5 GM4 process, 0.15µm gate length, via holes VG2 VG3 through the substrate, air bridges and electron beam gate lithography. -5V OR -4V It is available in bare die with BCB protection layer.
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