CHA3512-99F Datasheet PDF - United Monolithic Semiconductors Low Noise Digital Variable Amplifier Specs

CHA3512-99F - Low Noise Digital Variable Amplifier

Datasheet Summary

Description

The CHA3512-99F is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

Features

Performances: 6-18GHz.
23dBm saturated output power.
16dB gain.
1 bit attenuator for 20dB dynamic range.
DC power consumption: 210mA @ 4.5V.
Chip size: 4.27 x 2.46 x 0.1mm 20dB state Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range 6 18 G Small signal gain @ Attenuator state 0dB 16 Psat Saturated Output power @ Attenuator state 0dB 23 ATT dyn Att.

Datasheet Details

Part number	CHA3512-99F
Manufacturer	United Monolithic Semiconductors
File Size	510.40 KB
Description	Low Noise Digital Variable Amplifier
Datasheet	CHA3512-99F Datasheet
Additional preview pages of the CHA3512-99F datasheet.

📁 Similar Datasheet

CHA3080-98F - 71 ~ 76 GHz Medium Power Amplifier (UMS)

CHA-20NF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20NM - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20NMF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SM - (CHA-20xx) Coaxial Attenuators (Component General)

CHA-20SMF - (CHA-20xx) Coaxial Attenuators (Component General)

CHA02016 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

CHA0402 - High Frequency 70-GHz Thin Film Chip Resistor (Vishay)

CHA441 - Hall-effect sensor (Cosemitech)

Full PDF Text Transcription

Click to expand full text

CHA3512-99F 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512-99F is composed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 0dB state Main Features ■ Performances: 6-18GHz ■ 23dBm saturated output power ■ 16dB gain ■ 1 bit attenuator for 20dB dynamic range ■ DC power consumption: 210mA @ 4.5V ■ Chip size: 4.27 x 2.46 x 0.

Published: Jan 26, 2025 |