CHA3512-99F Datasheet | United Monolithic Semiconductors

6-18GHz Low Noise Digital Variable Amplifier Ga As Monolithic Microwave IC Description The CHA3512-99F is posed by a Single Pole Double Through (SPDT) switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. 0d B state Main Features - Performances: 6-18GHz - 23d Bm saturated output power - 16d B gain - 1 bit attenuator for 20d B dynamic range - DC power consumption: 210m A @ 4.5V - Chip size: 4.27 x 2.46 x 0.1mm 20d B state Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range Small signal gain @ Attenuator state 0d B Psat Saturated Output power @ Attenuator state 0d B ATT dyn Attenuator range ESD Protection: Electrostatic discharge sensitive device. Observe handling precautions ! Unit GHz d B d Bm d B Ref. :...