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CHA3513-99F - 3-bit Digital Variable Amplifier

General Description

stage travelling amplifier and a Single Pole RF Single Through (SPST) switch.

for defense applications.

Key Features

  • Performances: 6-18GHz.
  • 20dBm saturated output power.
  • 19 dB gain.
  • 3 bit attenuator for 26dB range.
  • DC power consumption, 300mA @ 4.5V.
  • Chip size: 6.68 x 2.46 x 0.1mm 0dB state 5dB state 10dB state Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range 6 18 G Small signal gain @ Attenuator state 0dB 19 Psat Saturated Output power @ Attenuator state 0dB 20 ATT dyn Attenuator range with 3bit 25 ESD Protection : El.

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Datasheet Details

Part number CHA3513-99F
Manufacturer United Monolithic Semiconductors
File Size 288.31 KB
Description 3-bit Digital Variable Amplifier
Datasheet download datasheet CHA3513-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA3513-99F 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513-99F is composed by a three 10A 5A 10A1 B C F G steps digital attenuator followed by a three RF stage travelling amplifier and a Single Pole RF Single Through (SPST) switch. It is designed IN 10dB 5dB 10dB OUT for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. 10B 5B 10B1 A D E H The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Typical on wafer Measurements Gain versus attenuation states It is available in chip form.