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CHA3513-99F Datasheet 3-bit Digital Variable Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA3513-99F 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave.

General Description

The CHA3513-99F is posed by a three 10A 5A 10A1 B C F G steps digital attenuator followed by a three RF stage travelling amplifier and a Single Pole RF Single Through (SPST) switch.

It is designed IN 10dB 5dB 10dB OUT for defense applications.

The backside of the chip is both RF and DC grounded.

Key Features

  • Performances: 6-18GHz.
  • 20dBm saturated output power.
  • 19 dB gain.
  • 3 bit attenuator for 26dB range.
  • DC power consumption, 300mA @ 4.5V.
  • Chip size: 6.68 x 2.46 x 0.1mm 0dB state 5dB state 10dB state Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range 6 18 G Small signal gain @ Attenuator state 0dB 19 Psat Saturated Output power @ Attenuator state 0dB 20 ATT dyn Attenuator range with 3bit 25 ESD Protection : El.

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CHA3513-99F Distributor