CHA3513-99F Datasheet | United Monolithic Semiconductors

6-18GHz 3 bit Digital Variable Amplifier Ga As Monolithic Microwave IC Description The CHA3513-99F is posed by a three 10A 5A 10A1 B C F G steps digital attenuator followed by a three RF stage travelling amplifier and a Single Pole RF Single Through (SPST) switch. It is designed IN 10d B 5d B 10d B OUT for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. 10B 5B 10B1 A D E The circuit is manufactured with a p HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Typical on wafer Measurements Gain versus attenuation states It is available in chip form. Main Features - Performances: 6-18GHz - 20d Bm saturated output power - 19 d B gain - 3 bit attenuator for 26d B range - DC power consumption, 300m A @ 4.5V - Chip size: 6.68 x 2.46 x 0.1mm 0d B state 5d B state 10d B state Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range Small signal gain @ Attenuator state 0d B Psat Saturated Output power @ Attenuator state 0d...