CHA3514-99F Datasheet PDF - United Monolithic Semiconductors 4-bit Digital Variable Amplifier Specs

CHA3514-99F - 4-bit Digital Variable Amplifier

Datasheet Summary

Description

The CHA3514-99F is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator.

It is designed for defense applications.

The backside of the chip is both RF and DC grounded.

Features

Performances: 6-18GHz.
19dBm saturated output power.
13 dB gain.
4bit attenuator for 39.5dB dynamic range.
DC power consumption, 190mA @ 4.5V.
Chip size: 5.54 x 2.30 x 0.1mm Typical on wafer Measurements Gain versus attenuation states Main Characteristics Tamb. = 25°C Symbol Parameter Min Typ Max Fop Operating frequency range 6 18 G Small signal gain @ Attenuator state 0dB 13 Psat Saturated Output power @ Attenuator state 0dB 19 ATT dyn Attenuator r.

Datasheet Details

Part number	CHA3514-99F
Manufacturer	United Monolithic Semiconductors
File Size	419.87 KB
Description	4-bit Digital Variable Amplifier
Datasheet	CHA3514-99F Datasheet
Additional preview pages of the CHA3514-99F datasheet.

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Full PDF Text Transcription

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CHA3514-99F 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514-99F is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the chip is both RF and DC grounded. This helps to simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ Performances: 6-18GHz ■ 19dBm saturated output power ■ 13 dB gain ■ 4bit attenuator for 39.5dB dynamic range ■ DC power consumption, 190mA @ 4.5V ■ Chip size: 5.54 x 2.30 x 0.

Published: Jan 27, 2025 |