CHA3666-99F
CHA3666-99F is Low Noise Amplifier manufactured by United Monolithic Semiconductors.
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
VD1
VD2
The CHA3666-99F is a two-stage self biased wide band monolithic low noise amplifier.
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.
RFout
P1
P2 N2
Main Features
- Broadband performances: 6-17GHz
- 1.8dB noise figure
- 26dBm 3rd order intercept point
- 17dBm power at 1dB pression
- 21dB gain
- Low DC power consumption
- DC bias: Vd=4.0Volt@Id=80mA
- Chip size 1.47x1.47x0.1mm
24,0
22,0
20,0
18,0
Gain
16,0
14,0
12,0
10,0
8,0
6,0...
