CHA3666-99F
Overview
VD1 VD2 The CHA3666-99F is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.
- Broadband performances: 6-17GHz
- 1.8dB noise figure
- 26dBm 3rd order intercept point
- 17dBm power at 1dB compression
- 21dB gain
- Low DC power consumption
- DC bias: Vd=4.0Volt@Id=80mA
- Chip size 1.47x1.47x0.1mm 24,0 22,0 20,0 18,0 Gain 16,0 14,0 12,0 10,0 8,0 6,0 4,0 2,0 NF 0,0
