CHA3666-99F Description
VD1 VD2 The CHA3666-99F is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.
CHA3666-99F Key Features
- Broadband performances: 6-17GHz
- 1.8dB noise figure
- 26dBm 3rd order intercept point
- 17dBm power at 1dB pression
- 21dB gain
- Low DC power consumption
- DC bias: Vd=4.0Volt@Id=80mA
- Chip size 1.47x1.47x0.1mm
- 27 Oct 20
- Parc Mosaic