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CHA3666-99F - Low Noise Amplifier

Datasheet Summary

Description

wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography.

Features

  • Broadband performances: 6-17GHz.
  • 1.8dB noise figure.
  • 26dBm 3rd order intercept point.
  • 17dBm power at 1dB compression.
  • 21dB gain.
  • Low DC power consumption.
  • DC bias: Vd=4.0Volt@Id=80mA.
  • Chip size 1.47x1.47x0.1mm 24,0 22,0 20,0 18,0 Gain 16,0 14,0 12,0 10,0 8,0 6,0 4,0 2,0 NF 0,0 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 Main Electrical Characteristics Tamb. = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND Symbol Parameter Min Typ Max Unit Fop.

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Datasheet Details

Part number CHA3666-99F
Manufacturer United Monolithic Semiconductors
File Size 489.05 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA3666-99F Datasheet
Additional preview pages of the CHA3666-99F datasheet.

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Full PDF Text Transcription

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CHA3666-99F 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description VD1 VD2 The CHA3666-99F is a two-stage self biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and RFin electron beam gate lithography. RFout UMS P1 P2 N2 Main Features ■ Broadband performances: 6-17GHz ■ 1.8dB noise figure ■ 26dBm 3rd order intercept point ■ 17dBm power at 1dB compression ■ 21dB gain ■ Low DC power consumption ■ DC bias: Vd=4.0Volt@Id=80mA ■ Chip size 1.47x1.47x0.1mm 24,0 22,0 20,0 18,0 Gain 16,0 14,0 12,0 10,0 8,0 6,0 4,0 2,0 NF 0,0 4,00 6,00 8,00 10,00 12,00 14,00 16,00 18,00 Main Electrical Characteristics Tamb.
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