Part CHA3666
Description GaAs Monolithic Microwave
Manufacturer United Monolithic Semiconductors
Size 167.20 KB
United Monolithic Semiconductors
CHA3666

Overview

The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. VD1 The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

  • Broadband performance 6-17GHz
  • 1.8dB noise figure
  • 26dBm 3rd order intercept point
  • 17dBm power at 1dB compression
  • 21dB gain