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CHA3666 - GaAs Monolithic Microwave

General Description

The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier.

The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • 24,0.
  • Broadband performance 6-17GHz.
  • 1.8dB noise figure.
  • 26dBm 3rd order intercept point.
  • 17dBm power at 1dB compression.
  • 21dB gain 22,0 20,0 18,0 16,0 14,0 12,0 10,0.
  • Low DC power consumption 8,0 6,0 4,0 2,0 0,0 Main Characteristics 4,00 Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND Gain 6,00 8,00 NF 10,00 12,00 14,00 16,00 18,00 Symbol Parameter NF Noise figure G Gain IP3 3rd order intercept point Min Typ Max Unit 1.8 2 dB 19 21 dB 26 dBm ESD.

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Datasheet Details

Part number CHA3666
Manufacturer United Monolithic Semiconductors
File Size 167.20 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA3666 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA3666 RoHS COMPLIANT 6-17GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. VD1 The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. RFin VD2 RFout UMS P1 P2 N2 Main Features 24,0 ■ Broadband performance 6-17GHz ■ 1.