CHA3666
CHA3666 is GaAs Monolithic Microwave manufactured by United Monolithic Semiconductors.
RoHS PLIANT
6-17GHz Low Noise Amplifier
GaAs Monolithic Microwave IC
Description
The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier.
VD1
The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
RFin
VD2
RFout
P1 P2 N2
Main Features
24,0
- Broadband performance 6-17GHz
- 1.8dB noise figure
- 26dBm 3rd order intercept point
- 17dBm power at 1dB pression
- 21dB gain
22,0 20,0 18,0 16,0 14,0 12,0 10,0
- Low DC power consumption
8,0 6,0
4,0
2,0
0,0
Main Characteristics
4,00
Temp = +25°C, Vd1=Vd2= +4V Pads: P1, N2=GND
Gain
6,00...
