CHA3666 Description
The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. VD1 The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
CHA3666 Key Features
- Broadband performance 6-17GHz
- 1.8dB noise figure
- 26dBm 3rd order intercept point
- 17dBm power at 1dB pression
- 21dB gain
- Low DC power consumption
- 17 Apr 08
- B.P.46
- 91401 Orsay Cedex France
- Fax : +33 (0)1 69 33 03 09