CHA3666
Overview
The CHA3666 is a two-stage self biased wide band monolithic low noise amplifier. VD1 The circuit is manufactured with a standard pHEMT process: 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
- Broadband performance 6-17GHz
- 1.8dB noise figure
- 26dBm 3rd order intercept point
- 17dBm power at 1dB compression
- 21dB gain