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CHA3689-99F - Low Noise Amplifier

General Description

amplifier.

communication systems.

Key Features

  • Broadband performance: 12.5-30GHz.
  • 2.0dB noise figure.
  • 26dB gain (12.5-26GHz).
  • 26dBm output IP3 (18-30GHz).
  • Low DC power consumption.
  • DC bias: Vd=4 Volt @ Id= 90 /120mA.
  • Chip size : 2.45 x 1.21 x 0.1mm Gain NF On wafer typical measurements @ 120mA Main Characteristics Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads B, D = GND (High current configuration) Symbol Parameter Min Typ Max Unit Freq Frequency range 12.5 30 GHz Gain Linear Gain 26 dB NF Noise Figu.

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Datasheet Details

Part number CHA3689-99F
Manufacturer United Monolithic Semiconductors
File Size 865.72 KB
Description Low Noise Amplifier
Datasheet download datasheet CHA3689-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA3689-99F 12.5-30GHz Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3689-99F is a three-stage self biased wide band monolithic low noise Vd1 Vd2 amplifier. RFin It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and B electron beam gate lithography. It is available in chip form. Vd3 RFout D Main Features ■ Broadband performance: 12.5-30GHz ■ 2.0dB noise figure ■ 26dB gain (12.5-26GHz) ■ 26dBm output IP3 (18-30GHz) ■ Low DC power consumption ■ DC bias: Vd=4 Volt @ Id= 90 /120mA ■ Chip size : 2.45 x 1.21 x 0.