Part CHA3689-99F
Description Low Noise Amplifier
Manufacturer United Monolithic Semiconductors
Size 865.72 KB
United Monolithic Semiconductors
CHA3689-99F

Overview

The CHA3689-99F is a three-stage self biased wide band monolithic low noise Vd1 Vd2 amplifier. RFin It is designed for a wide range of.

  • Broadband performance: 12.5-30GHz
  • 2.0dB noise figure
  • 26dB gain (12.5-26GHz)
  • 26dBm output IP3 (18-30GHz)
  • Low DC power consumption
  • DC bias: Vd=4 Volt @ Id= 90 /120mA
  • Chip size : 2.45 x 1.21 x 0.1mm Gain NF On wafer typical measurements @ 120mA Main Characteristics Tamb = +25°C, Vd1=Vd2=Vd3 = +4V Pads B, D = GND (High current configuration) Symbol Parameter Min Typ Max Unit Freq Frequency range
  • 5 30 GHz Gain Linear Gain 26 dB NF Noise Figure 2
  • 6 dB Pout1dB Output Power @1dB comp. 14 15 dBm Ref. : DSCHA36890301 - 27 Oct 20 1/16