CHA3801-99F Datasheet PDF - United Monolithic Semiconductors L-Band Low Noise Amplifier Specs

CHA3801-99F - L-Band Low Noise Amplifier

Datasheet Summary

Description

The CHA3801-99F is an L-Band LNA monolithic circuit including an active bias network.

Furthermore a protection network is included in order to allow high input power survivability.

The circuit is dedicated to space applications, and also well suited for a range of microwave applications and systems.

Features

L-Band performances: 1-2GHz.
1.45dB Noise Figure.
28dB Linear Gain.
17dBm Saturated Power.
27dBm Output Third Order Intercept.
DC bias: Vd = 5Volt @ 70mA.
Chip size 1.6x1.4x0.1mm Typical Noise Figure Main Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain NF Noise Figure Pout Output Power @1dB comp. Min Typ Max Unit 1 2 GHz 28 dB 1.45 dB 15 dBm Ref. : DSCHA38012328 - 23 Nov 12 1/10 Specifications subject to change w.

Datasheet Details

Part number	CHA3801-99F
Manufacturer	United Monolithic Semiconductors
File Size	243.57 KB
Description	L-Band Low Noise Amplifier
Datasheet	CHA3801-99F Datasheet
Additional preview pages of the CHA3801-99F datasheet.

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Full PDF Text Transcription

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CHA3801-99F RoHS COMPLIANT L-Band Low Noise Amplifier GaAs Monolithic Microwave IC Description The CHA3801-99F is an L-Band LNA monolithic circuit including an active bias network. Furthermore a protection network is included in order to allow high input power survivability. The circuit is dedicated to space applications, and also well suited for a range of microwave applications and systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features ■ L-Band performances: 1-2GHz ■ 1.45dB Noise Figure ■ 28dB Linear Gain ■ 17dBm Saturated Power ■ 27dBm Output Third Order Intercept ■ DC bias: Vd = 5Volt @ 70mA ■ Chip size 1.6x1.4x0.

Published: Feb 2, 2016 |