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CHA4107-99F - 4.5-6.5GHz Medium Power Amplifier

General Description

applications.

efficiency at 3dBcomp.

Key Features

  • Frequency band: 4.5-6.5GHz.
  • 26dBm @ 3dBcomp.
  • 24.5 dB Linear Gain.
  • High PAE: 35% for +5dBm input power.
  • DC bias: Vd=8V@Id=115mA.
  • Chip size 2.37x1.5x0.07mm Main Characteristics Vd = 8V, Id (Quiescent) = 115 mA, Drain Pulse width = 45µs, Duty cycle = 12% Symbol Parameter Min Typ Max Freq Frequency range 4.5 6.5 Gain Linear Gain 24.5 NF Noise Figure 5 Pout Output Power @ 3dB comp. 26 Unit GHz dB dB dBm Ref. : DSCHA41070301 - 27 Oct 20 1/10 Specificati.

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Datasheet Details

Part number CHA4107-99F
Manufacturer United Monolithic Semiconductors
File Size 682.31 KB
Description 4.5-6.5GHz Medium Power Amplifier
Datasheet download datasheet CHA4107-99F Datasheet

Full PDF Text Transcription (Reference)

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CHA4107-99F 4.5-6.5GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA4107-99F is a monolithic two stage power amplifier designed for C-Band applications. The MPA provides typically 26dBm output power associated to 35% power added efficiency at 3dBcomp. IN The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Vg Vd1 Vd2 OUT Main Features ■ Frequency band: 4.5-6.5GHz ■ 26dBm @ 3dBcomp ■ 24.5 dB Linear Gain ■ High PAE: 35% for +5dBm input power ■ DC bias: Vd=8V@Id=115mA ■ Chip size 2.37x1.5x0.