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CHA5115-99F - X-band Medium Power Amplifier

Datasheet Summary

Description

The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.

The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression.

Features

  •  0.25µm Power pHEMT Technology  Frequency band: 8-12GHz  Output power: 29dBm @ 3dBcomp  Linear gain: 25dB  High PAE: 39% @ 3dBcomp  Noise Factor: 5dB typ.  Quiescent bias point: Vd=8V, Id=0.19A  Chip size: 2.37x1.82x0.07mm Pout (dBm) & PAE(%) & Gain(dB) 44 PAE @ 3dB comp 42 40 38 36 34 32 Pout @ 3dB comp 30 28 26 Linear Gain 24 22 20 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Main Characteristics Tamb =+25°C, Vd =8V, Id (Quiescent) =190mA, Drain Pulse wid.

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Datasheet Details

Part number CHA5115-99F
Manufacturer United Monolithic Semiconductors
File Size 311.15 KB
Description X-band Medium Power Amplifier
Datasheet download datasheet CHA5115-99F Datasheet
Additional preview pages of the CHA5115-99F datasheet.

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Full PDF Text Transcription

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CHA5115-99F X-band Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications. The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression. This device is manufactured using 0.25µm IN Power pHEMT process, including, via holes through the substrate and air bridges. It is available in chip form. Vg Vd1 Vd2 OUT Main Features  0.25µm Power pHEMT Technology  Frequency band: 8-12GHz  Output power: 29dBm @ 3dBcomp  Linear gain: 25dB  High PAE: 39% @ 3dBcomp  Noise Factor: 5dB typ.  Quiescent bias point: Vd=8V, Id=0.19A  Chip size: 2.37x1.82x0.
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