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CHA5115-99F Datasheet X-band Medium Power Amplifier

Manufacturer: United Monolithic Semiconductors

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Datasheet Details

Part number CHA5115-99F
Manufacturer United Monolithic Semiconductors
File Size 311.15 KB
Description X-band Medium Power Amplifier
Datasheet download datasheet CHA5115-99F Datasheet

General Description

The CHA5115-99F is a monolithic two-stage GaAs medium power amplifier designed for X-band applications.

The MPA provides typically 29dBm output power associated to 39% power added efficiency at 3dB gain compression.

This device is manufactured using 0.25µm IN Power pHEMT process, including, via holes through the substrate and air bridges.

Overview

CHA5115-99F X-band Medium Power Amplifier GaAs Monolithic Microwave.

Key Features

  •  0.25µm Power pHEMT Technology  Frequency band: 8-12GHz  Output power: 29dBm @ 3dBcomp  Linear gain: 25dB  High PAE: 39% @ 3dBcomp  Noise Factor: 5dB typ.  Quiescent bias point: Vd=8V, Id=0.19A  Chip size: 2.37x1.82x0.07mm Pout (dBm) & PAE(%) & Gain(dB) 44 PAE @ 3dB comp 42 40 38 36 34 32 Pout @ 3dB comp 30 28 26 Linear Gain 24 22 20 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 Frequency (GHz) Main Characteristics Tamb =+25°C, Vd =8V, Id (Quiescent) =190mA, Drain Pulse wid.

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