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CHA5350-99F - 17-24GHz Medium Power Amplifier

Datasheet Summary

Description

associated to a high IP3 output of 34dBm.

Features

  • Broadband performances: 17-24GHz.
  • Linear gain = 26dB.
  • Pout = 26.5dBm @ 1dB comp.
  • High OIP3 = 34dBm.
  • DC bias: Vd=6Volt @ Id=300mA.
  • Chip size 2.38x1.46x0.07mm Pout +IP3 Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain P-1dB Output Power @1dB gain compression OIP3 Output third order interception point Min Typ Max Unit 17 24 GHz 26 dB 26.5 dBm 34 dBm Ref. : DSCHA53500301- 27 Oct 20 1/12 Specificat.

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Datasheet Details

Part number CHA5350-99F
Manufacturer United Monolithic Semiconductors
File Size 447.39 KB
Description 17-24GHz Medium Power Amplifier
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CHA5350-99F 17-24GHz Medium Power Amplifier GaAs Monolithic Microwave IC Description The CHA5350-99F is a four stage monolithic Vd1 Vd2,3 Vd4 MPA that typically provides an output power of 26.5dBm at 1dB gain compression associated to a high IP3 output of 34dBm. It is designed for a wide range of In Out applications, from professional to STG1 STG2 STG3 STG4 commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. Vg It is available in chip form. Main Features ■ Broadband performances: 17-24GHz ■ Linear gain = 26dB ■ Pout = 26.5dBm @ 1dB comp. ■ High OIP3 = 34dBm ■ DC bias: Vd=6Volt @ Id=300mA ■ Chip size 2.38x1.46x0.
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