CHA5356-QGG Key Features
- Broadband performances: 17.7-23.6GHz
- 33dBm Pout in saturation
- 19dB Gain
- 30dB power detection dynamic
- DC bias: Vd=6.0Volt@Id=700mA
- QGG-QFN5x5
- Parc SILIC
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
- France
- Part: CHA5356-QGG
- Manufacturer: United Monolithic Semiconductors
- Size: 567.02 KB
Related United Monolithic Semiconductors Datasheets
| Part Number | Description |
|---|---|
| CHA5350-99F | 17-24GHz Medium Power Amplifier |
| CHA5390 | 24-30GHz Medium Power Amplifier |
| CHA5390TBF | 24-30GHz Medium Power Amplifier |
| CHA5010B | X Band Driver Amplifier |
| CHA5012 | X Band Driver Amplifier |
CHA5356-QGG Description
The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length.