CHA5356-QGG Datasheet GaAs Monolithic Microwave

Manufacturer: United Monolithic Semiconductors

Datasheet Details

Part number	CHA5356-QGG
Manufacturer	United Monolithic Semiconductors
File Size	567.02 KB
Description	GaAs Monolithic Microwave
Datasheet	CHA5356-QGG Datasheet

The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector.

It is designed for a wide range of applications, from military to commercial communication systems.

The circuit is manufactured with a pHEMT process, 0.15µm gate length.

CHA5356-QGG UMS A366878A YYWWG 17.7-23.6GHz Packaged HPA GaAs Monolithic Microwave IC in SMD leadless.

Broadband performances: 17.7-23.6GHz 35 Saturated power.
33dBm Pout in saturation UMS.
38dBmOIP3.
19dB Gain.
30dB power detection dynamic.
DC bias: Vd=6.0Volt@Id=700mA.
QGG-QFN5x5.
MSL3 34 33 32 31 30 -40 °C 25 °C 85 °C 29 28 17 18 19 20 21 22 23 24 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Freq Gain Psat OIP3 Parameter Frequency range Linear Gain Saturated Output Power Output IP3 A3687ARef. :DSCHA5356-QGG4273-30.