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CHA5356-QGG Datasheet

Manufacturer: United Monolithic Semiconductors
CHA5356-QGG datasheet preview

Datasheet Details

Part number CHA5356-QGG
Datasheet CHA5356-QGG-UnitedMonolithicSemiconductors.pdf
File Size 567.02 KB
Manufacturer United Monolithic Semiconductors
Description GaAs Monolithic Microwave
CHA5356-QGG page 2 CHA5356-QGG page 3

CHA5356-QGG Overview

The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a wide range of applications, from military to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length.

CHA5356-QGG Key Features

  • Broadband performances: 17.7-23.6GHz
  • 33dBm Pout in saturation
  • 19dB Gain
  • 30dB power detection dynamic
  • DC bias: Vd=6.0Volt@Id=700mA
  • QGG-QFN5x5
  • Parc SILIC
  • 10, Avenue du Québec
  • 91140 VILLEBON-SUR-YVETTE
  • France
United Monolithic Semiconductors logo - Manufacturer

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CHA5356-QGG Distributor

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