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CHA5356-QGG - GaAs Monolithic Microwave

Datasheet Summary

Description

The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector.

It is designed for a wide range of applications, from military to commercial communication systems.

The circuit is manufactured with a pHEMT process, 0.15µm gate length.

Features

  • Broadband performances: 17.7-23.6GHz 35 Saturated power.
  • 33dBm Pout in saturation UMS.
  • 38dBmOIP3.
  • 19dB Gain.
  • 30dB power detection dynamic.
  • DC bias: Vd=6.0Volt@Id=700mA.
  • QGG-QFN5x5.
  • MSL3 34 33 32 31 30 -40 °C 25 °C 85 °C 29 28 17 18 19 20 21 22 23 24 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Freq Gain Psat OIP3 Parameter Frequency range Linear Gain Saturated Output Power Output IP3 A3687ARef. :DSCHA5356-QGG4273-30.

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Datasheet Details

Part number CHA5356-QGG
Manufacturer United Monolithic Semiconductors
File Size 567.02 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA5356-QGG Datasheet
Additional preview pages of the CHA5356-QGG datasheet.

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Full PDF Text Transcription

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CHA5356-QGG UMS A366878A YYWWG 17.7-23.6GHz Packaged HPA GaAs Monolithic Microwave IC in SMD leadless package Description The CHA5356-QGG is a three stage monolithic GaAs high power amplifier, which integrates a power detector. It is designed for a wide range of applications, from military to commercial communication systems. The circuit is manufactured with a pHEMT process, 0.15µm gate length. It is supplied in RoHS compliant SMD package. UUMUMSMSS AAA3536356866687878AA YYYYWYWWWWWGG SMU A786863A GWWYY Output power (dBm) UMS A368687A YYWWG Main Features ■ Broadband performances: 17.7-23.6GHz 35 Saturated power ■ 33dBm Pout in saturation UMS■38dBmOIP3 ■ 19dB Gain ■ 30dB power detection dynamic ■ DC bias: Vd=6.
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