CHA5659-98F Datasheet | United Monolithic Semiconductors

36-43.5GHz Power Amplifier GaAs Monolithic Microwave IC in bare die Description The CHA5659-98F is a four stage monolithic GaAs High Power Amplifier producing 1.3 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio or K-band Sat applications. The CHA5659-98F is remended with the CHA3398-98F as a driver. The circuit is manufactured with a pHEMT process, 0.15µm gate length. Main Features - Broadband performances: 36-43.5GHz - 31dBm saturated power - 38dBm OIP3 - 22dB gain - Gain control up to 15dB - DC bias: Vd = 6.0Volt @ Idq = 0.8A - Chip size...