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CHA5659-98F - Power Amplifier

Datasheet Summary

Description

The CHA5659-98F is a four stage monolithic GaAs High Power Amplifier producing 1.3 Watt output power.

It is highly linear, with possible gain control and integrates a power detector.

ESD protections are included.

Features

  • Broadband performances: 36-43.5GHz.
  • 31dBm saturated power.
  • 38dBm OIP3.
  • 22dB gain.
  • Gain control up to 15dB.
  • DC bias: Vd = 6.0Volt @ Idq = 0.8A.
  • Chip size 3.60x3.00x0.07mm Output power (dBm) & PAE (%) Output power & PAE vs frequency 34 32 30 28 26 Psat 24 P1dB 22 PAE sat 20 18 16 14 12 10 36 37 38 39 40 41 42 43 44 Frequency (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat.

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Datasheet Details

Part number CHA5659-98F
Manufacturer United Monolithic Semiconductors
File Size 911.67 KB
Description Power Amplifier
Datasheet download datasheet CHA5659-98F Datasheet
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Full PDF Text Transcription

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CHA5659-98F 36-43.5GHz Power Amplifier GaAs Monolithic Microwave IC in bare die Description The CHA5659-98F is a four stage monolithic GaAs High Power Amplifier producing 1.3 Watt output power. It is highly linear, with possible gain control and integrates a power detector. ESD protections are included. It is designed for Point To Point Radio or K-band SatCom applications. The CHA5659-98F is recommended with the CHA3398-98F as a driver. The circuit is manufactured with a pHEMT process, 0.15µm gate length. Main Features ■ Broadband performances: 36-43.5GHz ■ 31dBm saturated power ■ 38dBm OIP3 ■ 22dB gain ■ Gain control up to 15dB ■ DC bias: Vd = 6.0Volt @ Idq = 0.8A ■ Chip size 3.60x3.00x0.
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