Datasheet Summary
Linear Gain (dB) & Pout @ ~ 3dBp Idrain @ ~ 3dBp (mA)
8-12GHz High Power Amplifier
GaAs Monolithic Microwave IC
Description
The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%. It is designed for a wide range of applications, from defense to mercial munication systems. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.
Main Features
- High power : 32.5dBm
- High PAE : 38%
- Frequency band : 8-12GHz
- Linear gain :...