CHA6005-99F - High Power Amplifier

Product Overview

United Monolithic Semiconductors

Datasheet Details

Part number	CHA6005-99F
Manufacturer	United Monolithic Semiconductors
File Size	235.67 KB
Description	High Power Amplifier
Datasheet	CHA6005-99F Datasheet
Additional preview pages of the CHA6005-99F datasheet.

Product details

Description

The CHA6005-99F is a High Power Amplifier monolithic circuit, which integrates two stages and produces 32.5dBm output power associated to a high power added efficiency of 38%.

Features

High power : 32.5dBm.
High PAE : 38%.
Frequency band : 8-12GHz.
Linear gain : 22dB.
DC bias: Vd=8Volt@Id=350mA.
Chip size 3.0x1.5x0.1mm 34 600 32 550 30 500 28 450 Linear Gain (dB) 26 Pout @ Pin=14 dBm (3dBcomp) 400 Idrain @ Pin=14 dBm (3dBcomp) 24 350 22 300 20 250 18 200 8 8.5 9 9.5 10 10.5 11 11.5 12 Freq (GHz) Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range G Linear Gain P3dB Output Power @ 3d.

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Published: Mar 4, 2016 |