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CHA6105-99F - Driver Amplifier

Datasheet Summary

Description

The CHA6105-99F is a monolithic threestage medium power amplifier designed for X-band applications.

The driver provides typically 31.5dBm output power at saturation and is suitable for systems requiring a high compression level.

Features

  • Frequency range: 8-12GHz.
  • 31.5dBm Saturated output power.
  • 30dB Linear Gain.
  • Quiescent bias point: 8V@700mA.
  • Chip size: 2.80 x 2.21 x 0.07mm VD1 VD2.
  • IN Control circuit V_C VD3.
  • OUT VD3 34 1100 33 Pout (dBm) @ 3dBc 1050 32 (dBm) 1000 31 950 30 900 29 850 28 800 27 750 26 700 25 Linear Gain (dB) 24 Id (mA) @ 3dBc 650 (%) 600 23 550 22 500 7 7,5 8 8,5 9 9,5 10 10,5 11 11,5 12 12,5 13 Frequency (GHz) Pout & Id @ 3dB gain comp.

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Datasheet Details

Part number CHA6105-99F
Manufacturer United Monolithic Semiconductors
File Size 361.32 KB
Description Driver Amplifier
Datasheet download datasheet CHA6105-99F Datasheet
Additional preview pages of the CHA6105-99F datasheet.

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Full PDF Text Transcription

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CHA6105-99F 8-12GHz Driver Amplifier GaAs Monolithic Microwave IC Description The CHA6105-99F is a monolithic threestage medium power amplifier designed for X-band applications. The driver provides typically 31.5dBm output power at saturation and is suitable for systems requiring a high compression level. Moreover it includes a biasing control circuit that makes Pout less sensitive to spread and chip environment. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features  Frequency range: 8-12GHz  31.5dBm Saturated output power  30dB Linear Gain  Quiescent bias point: 8V@700mA  Chip size: 2.80 x 2.21 x 0.
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