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CHA6550-98F Datasheet Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA6550-98F 17-23.6GHz Power Amplifier GaAs Monolithic Microwave IC bare.

General Description

The CHA6550-98F is a three stage monolithic GaAs high power amplifier circuit, which integrates differential mode power Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 DET detector at the output.

Gain control up to REF 15dB is achievable thanks to gate voltage.

It is a field proven solution for Point to Point RFIN RFOUT telemunication systems, also suitable for other applications such as SAT.

Key Features

  • Broadband performances: 17-23.6GHz.
  • 34dBm saturated power.
  • 39dBm OIP3.
  • 22dB gain.
  • Gain control up to 15dB.
  • DC bias: Vd = 6Volt @ Id=1.3A.
  • Chip size 3.46x3.61x0.07 mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 17 23.6 GHz 22 dB 34 dBm 39 dBm Ref. : DSCHA65500301 - 27 Oct 20 1/12 Specifications subject to change without notice.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA6550-QXG 17.0 - 23.6GHz Power Amplifier
CHA6551-99F 17-24GHz Power Amplifier
CHA6552-QJG GaAs Monolithic Microwave
CHA6558-99F four stages GaAs high power amplifier
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CHA6518 5 - 18 GHz High Power Amplifier
CHA6005-99F High Power Amplifier
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CHA6015-99F 2-8GHz High Power Amplifier
CHA6042 13-16GHz High Power Amplifier

CHA6550-98F Distributor