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CHA6550-98F - Power Amplifier

Datasheet Summary

Description

detector at the output.

15dB is achievable thanks to gate voltage.

Features

  • Broadband performances: 17-23.6GHz.
  • 34dBm saturated power.
  • 39dBm OIP3.
  • 22dB gain.
  • Gain control up to 15dB.
  • DC bias: Vd = 6Volt @ Id=1.3A.
  • Chip size 3.46x3.61x0.07 mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain Psat Saturated output power OIP3 Output IP3 Min Typ Max Unit 17 23.6 GHz 22 dB 34 dBm 39 dBm Ref. : DSCHA65500301 - 27 Oct 20 1/12 Specifications subject to change without notice.

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Datasheet Details

Part number CHA6550-98F
Manufacturer United Monolithic Semiconductors
File Size 970.04 KB
Description Power Amplifier
Datasheet download datasheet CHA6550-98F Datasheet
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Full PDF Text Transcription

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CHA6550-98F 17-23.6GHz Power Amplifier GaAs Monolithic Microwave IC bare die Description The CHA6550-98F is a three stage monolithic GaAs high power amplifier circuit, which integrates differential mode power Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 DET detector at the output. Gain control up to REF 15dB is achievable thanks to gate voltage. It is a field proven solution for Point to Point RFIN RFOUT telecommunication systems, also suitable for other applications such as SATCOM. The circuit is highly linear and compatible with the last generation of Digital Pre-Distortion. Its versatile biasing condition helps to tune the performances. The circuit is manufactured with a pHEMT Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 space evaluated process, 0.15µm gate length.
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