CHA6652-98F Datasheet Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA6652-98F 21-27.5GHz Power Amplifier GaAs Monolithic Microwave IC bare.

Datasheet Details

Part number	CHA6652-98F
Manufacturer	United Monolithic Semiconductors
File Size	1.23 MB
Description	Power Amplifier
Datasheet	CHA6652-98F-UnitedMonolithicSemiconductors.pdf

The CHA6652-98F is a three stage monolithic GaAs High Power Amplifier circuit producing 2W output power.

It integrates Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 DET differential mode power detector at the REF output.

Gain control up to 15dB is achievable thanks to gate voltage.

Broadband performances: 21-27.5GHz.
33dBm saturated power.
39dBm OIP3.
22.5dB gain.
Gain control up to 15dB.
DC bias: Vd = 6.0Volt @ Id=1.3A.
Chip size 3.46x3.61x0.07 mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 21 27.5 GHz Gain(1) Linear Gain 22.5 dB Psat Saturated output power 33 dBm OIP3 Output IP3 39 dBm (1) These values are representative of on-wafer measurements (pulsed mode) tha.