Datasheet Details
| Part number | CHA6652-98F |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 1.23 MB |
| Description | Power Amplifier |
| Datasheet |
 CHA6652-98F Datasheet
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General Description
monolithic GaAs High Power Amplifier circuit producing 2W output power.
output.
thanks to gate voltage.
Key Features
- Broadband performances: 21-27.5GHz.
- 33dBm saturated power.
- 39dBm OIP3.
- 22.5dB gain.
- Gain control up to 15dB.
- DC bias: Vd = 6.0Volt @ Id=1.3A.
- Chip size 3.46x3.61x0.07 mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 21 27.5 GHz Gain(1) Linear Gain 22.5 dB Psat Saturated output power 33 dBm OIP3 Output IP3 39 dBm (1) These values are representative of on-wafer measurements (pulsed mode) tha.