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CHA6652-98F - Power Amplifier

Datasheet Summary

Description

monolithic GaAs High Power Amplifier circuit producing 2W output power.

output.

thanks to gate voltage.

Features

  • Broadband performances: 21-27.5GHz.
  • 33dBm saturated power.
  • 39dBm OIP3.
  • 22.5dB gain.
  • Gain control up to 15dB.
  • DC bias: Vd = 6.0Volt @ Id=1.3A.
  • Chip size 3.46x3.61x0.07 mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 21 27.5 GHz Gain(1) Linear Gain 22.5 dB Psat Saturated output power 33 dBm OIP3 Output IP3 39 dBm (1) These values are representative of on-wafer measurements (pulsed mode) tha.

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Datasheet Details

Part number CHA6652-98F
Manufacturer United Monolithic Semiconductors
File Size 1.23 MB
Description Power Amplifier
Datasheet download datasheet CHA6652-98F Datasheet
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Full PDF Text Transcription

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CHA6652-98F 21-27.5GHz Power Amplifier GaAs Monolithic Microwave IC bare die Description The CHA6652-98F is a three stage monolithic GaAs High Power Amplifier circuit producing 2W output power. It integrates Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 DET differential mode power detector at the REF output. Gain control up to 15dB is achievable thanks to gate voltage. RFIN RFOUT It is a field proven solution for Point to Point telecommunication systems. The circuit is highly linear and compatible with the last generation of Digital Pre-Distortion. Its versatile biasing condition helps to tune the performances. The circuit is manufactured with an internal Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 pHEMT space evaluated process, 0.15µm gate length. Main Features ■ Broadband performances: 21-27.
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