Part CHA6652-98F
Description Power Amplifier
Manufacturer United Monolithic Semiconductors
Size 1.23 MB
United Monolithic Semiconductors
CHA6652-98F

Overview

The CHA6652-98F is a three stage monolithic GaAs High Power Amplifier circuit producing 2W output power. It integrates Vg1 Vd1 Vg2 Vd2 Vg3 Vd3 DET differential mode power detector at the REF output.

  • Broadband performances: 21-27.5GHz
  • 33dBm saturated power
  • 39dBm OIP3
  • 22.5dB gain
  • Gain control up to 15dB
  • DC bias: Vd = 6.0Volt @ Id=1.3A
  • Chip size 3.46x3.61x0.07 mm Main Electrical Characteristics Tamb.= +25°C Symbol Parameter Min Typ Max Unit Freq Frequency range 21
  • 5 GHz Gain(1) Linear Gain
  • 5 dB Psat Saturated output power 33 dBm OIP3 Output IP3 39 dBm (1) These values are representative of on-wafer measurements (pulsed mode) that are made without bonding wires at the RF ports. Ref. : DSCHA66520301 - 27 Oct 20 1/14