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CHA7060-QAB - Power Amplifier

General Description

The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 6-9GHz bandwidth.

It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM).

Key Features

  • RF bandwidth: 5.6-8.5GHz.
  • Gain: 30dB.
  • Psat: 41dBm (@5dB gain comp).
  • EVM: -33dB@34dBm average Pout (1).
  • PAE : 40% @41dBm average Pout.
  • Low AM/AM & AM/PM.
  • DC bias: Vd = 20.0Volt @ Idq = 420mA.
  • 38 leads QFN 6x6mm // MSL3 (1) 56MHz modulation bandwidth, 4QAM Output power (dBm) & PAE (%) Output power & PAE vs frequency 43 42 41 40 39 38 Psat 37 P1dB 36 35 PAE sat 34 33 32 31 30 29 28 27 26 25 4,5 5,5 6,5 7,5 8,5 9,5 Frequency (GH.

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Datasheet Details

Part number CHA7060-QAB
Manufacturer United Monolithic Semiconductors
File Size 1.06 MB
Description Power Amplifier
Datasheet download datasheet CHA7060-QAB Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA7060-QAB 5.6-8.5GHz Power Amplifier GaN Monolithic Microwave IC in SMD leadless package Description The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 6-9GHz bandwidth. It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM). The circuit is based on GaN technology; 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC). It is a low cost plastic packaged designed for Point To Point Radio applications. It is supplied in RoHS compliant SMD package. Main Features ■ RF bandwidth: 5.6-8.5GHz ■ Gain: 30dB ■ Psat: 41dBm (@5dB gain comp) ■ EVM: -33dB@34dBm average Pout (1) ■ PAE : 40% @41dBm average Pout ■ Low AM/AM & AM/PM ■ DC bias: Vd = 20.