CHA7060-QAB Datasheet Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA7060-QAB 5.6-8.5GHz Power Amplifier GaN Monolithic Microwave IC in SMD leadless.

Datasheet Details

Part number	CHA7060-QAB
Manufacturer	United Monolithic Semiconductors
File Size	1.06 MB
Description	Power Amplifier
Datasheet	CHA7060-QAB-UnitedMonolithicSemiconductors.pdf

The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 6-9GHz bandwidth.

It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM).

The circuit is based on GaN technology;

RF bandwidth: 5.6-8.5GHz.
Gain: 30dB.
Psat: 41dBm (@5dB gain comp).
EVM: -33dB@34dBm average Pout (1).
PAE : 40% @41dBm average Pout.
Low AM/AM & AM/PM.
DC bias: Vd = 20.0Volt @ Idq = 420mA.
38 leads QFN 6x6mm // MSL3 (1) 56MHz modulation bandwidth, 4QAM Output power (dBm) & PAE (%) Output power & PAE vs frequency 43 42 41 40 39 38 Psat 37 P1dB 36 35 PAE sat 34 33 32 31 30 29 28 27 26 25 4,5 5,5 6,5 7,5 8,5 9,5 Frequency (GH.

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