CHA7060-QAB Datasheet | United Monolithic Semiconductors

5.6-8.5GHz Power Amplifier GaN Monolithic Microwave IC in SMD leadless package Description The CHA7060-QAB is a two stages monolithic GaN High Power Amplifier, reaching 12 Watt output power over 6-9GHz bandwidth. It offers high linearity performance with 30dB of Gain and an EVM of 33dB @34dBm average Pout (56MHz modulation bandwidth, 4QAM). The circuit is based on GaN technology; 150nm Gallium Nitride on Silicon Carbide (AlGaN/GaN on SiC). It is a low cost plastic packaged designed for Point To Point Radio applications. It is supplied in RoHS pliant SMD package. Main Features - RF bandwidth: 5.6-8.5GHz - Gain: 30dB - Psat: 41dBm (@5dB gain p) - EVM: -33dB@34dBm average...