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CHA7215-99F - X-band High Power Amplifier

Datasheet Summary

Description

for X band applications.

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Features

  •  0.25 µm Power pHEMT Technology  Frequency band: 8.5.
  • 11.5GHz  Output power: 39.5dBm at saturation  High linear gain: 28dB  Power added efficiency: 34% @4dBc  Quiescent bias point: Vd=8V, Id=2.3A  Chip size: 5 x 3.31 x 0.07mm Output Power (dBm) Output Power versus Frequency @Pin=19dBm 41 40,5 40 39,5 39 38,5 38 37,5 37 36,5 36 Temp=-40°C Temp=+20°C 35,5 Temp=+80°C 35 8 8,5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Main Electrical Characteristics Vd=8V, I.

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Datasheet Details

Part number CHA7215-99F
Manufacturer United Monolithic Semiconductors
File Size 310.65 KB
Description X-band High Power Amplifier
Datasheet download datasheet CHA7215-99F Datasheet
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Full PDF Text Transcription

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CHA7215-99F X-band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7215-99F is a monolithic three- stage GaAs high power amplifier designed for X band applications. ● The HPA provides typically 9W output power IN associated to 35% power added efficiency at 4dBc and a high robustness on mismatch load. This device is manufactured using 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. VG1R VD1 ●● ● VD1 VG2R VD2 ●● ● VD2 VG3R VD3 ●● ● OUT ●● VG3R VD3 Main Features  0.25 µm Power pHEMT Technology  Frequency band: 8.5 – 11.5GHz  Output power: 39.5dBm at saturation  High linear gain: 28dB  Power added efficiency: 34% @4dBc  Quiescent bias point: Vd=8V, Id=2.3A  Chip size: 5 x 3.31 x 0.
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