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CHA7215 - GaAs Monolithic Microwave

Datasheet Summary

Description

The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications.

The HPA provides typically 9W output power associated to 35% power added efficiency at 4dBc and a high robustness on mismatch load.

Features

  • 0.25 µm Power pHEMT Technology Frequency band: 8.5.
  • 11.5GHz Output power: 39.5dBm at saturation High linear gain: 28dB Power added efficiency: 34% @4dBc Quiescent bias point: Vd=8V, Id=2.3A Chip size: 5 x 3.31 x 0.07mm VG1R VD1.
  • IN.
  • VD1 VG2R VD2.
  • VD2 VG3R VD3.
  • VG3R VD3.
  • OUT O utput Pow er (dB m ) 41 40,5 40 39,5 39 38,5 38 37,5 37 36,5 36 35,5 35 8 Output Power versus Frequency @Pin=19dBm Temp=-40°C Temp=+20°C Temp=+.

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Datasheet preview – CHA7215

Datasheet Details

Part number CHA7215
Manufacturer United Monolithic Semiconductors
File Size 188.67 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHA7215 Datasheet
Additional preview pages of the CHA7215 datasheet.

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Full PDF Text Transcription

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CHA7215 RoHS COMPLIANT X-band High Power Amplifier GaAs Monolithic Microwave IC Description The CHA7215 is a monolithic three-stage GaAs high power amplifier designed for X band applications. The HPA provides typically 9W output power associated to 35% power added efficiency at 4dBc and a high robustness on mismatch load. This device is manufactured using 0.25 µm Power pHEMT process, including, via holes through the substrate and air bridges. Main Features 0.25 µm Power pHEMT Technology Frequency band: 8.5 – 11.5GHz Output power: 39.5dBm at saturation High linear gain: 28dB Power added efficiency: 34% @4dBc Quiescent bias point: Vd=8V, Id=2.3A Chip size: 5 x 3.31 x 0.
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