CHA8100-99F Datasheet PDF - United Monolithic Semiconductors X-band HBT High Power Amplifier Specs

CHA8100-99F - X-band HBT High Power Amplifier

Datasheet Summary

Description

The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications.

The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output.

an analogue biasing circuit that makes it less sensitiv

Features

11W output power in pulse mode.
High gain: > 18dB @ 10GHz.
High PAE: 40% @ 10GHz.
Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit.
Chip size: 4.9 x 3.68 x 0.1mm3 Main Electrical Characteristics Tamb. = +25°C Vc=9V, Ic (Quiescent) = 2.1A, Pulse width=100µs, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Top Operating temperature range (1) -40 +80 °C F_op Operating frequency range 9 10.5 GHz P_sat Sa.

Datasheet Details

Part number	CHA8100-99F
Manufacturer	United Monolithic Semiconductors
File Size	409.43 KB
Description	X-band HBT High Power Amplifier
Datasheet	CHA8100-99F Datasheet
Additional preview pages of the CHA8100-99F datasheet.

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Full PDF Text Transcription

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CHA8100-99F X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes:  an analogue biasing circuit that makes it less sensitive to spread and chip environment.  an integrated TTL interface that enables to switch the HPA with a current consumption lower than 1mA The circuit is 100% DC and RF tested on wafer to ensure performance compliance. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.

Published: Jan 27, 2025 |