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CHA8100-99F - X-band HBT High Power Amplifier

General Description

The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications.

The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output.

an analogue biasing circuit that makes it less sensitiv

Key Features

  • 11W output power in pulse mode.
  • High gain: > 18dB @ 10GHz.
  • High PAE: 40% @ 10GHz.
  • Two biasing modes: - Digital control thanks to TTL interface - Analog control thanks to biasing circuit.
  • Chip size: 4.9 x 3.68 x 0.1mm3 Main Electrical Characteristics Tamb. = +25°C Vc=9V, Ic (Quiescent) = 2.1A, Pulse width=100µs, Duty cycle = 20% Symbol Parameter Min Typ Max Unit Top Operating temperature range (1) -40 +80 °C F_op Operating frequency range 9 10.5 GHz P_sat Sa.

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Datasheet Details

Part number CHA8100-99F
Manufacturer United Monolithic Semiconductors
File Size 409.43 KB
Description X-band HBT High Power Amplifier
Datasheet download datasheet CHA8100-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA8100-99F X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes:  an analogue biasing circuit that makes it less sensitive to spread and chip environment.  an integrated TTL interface that enables to switch the HPA with a current consumption lower than 1mA The circuit is 100% DC and RF tested on wafer to ensure performance compliance. This device is manufactured using a GaInP HBT process, including, via holes through the substrate and air bridges.