CHA8100-99F Datasheet | United Monolithic Semiconductors

X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description The CHA8100-99F chip is a monolithic twostage high power amplifier designed for X band applications. The HPA provides typically 11W output power, 40% power added efficiency and a high robustness on mismatched output. Moreover it includes: - an analogue biasing circuit that makes it less sensitive to spread and chip environment. - an integrated TTL interface that enables to switch the HPA with a current consumption lower than 1mA The circuit is 100% DC and RF tested on wafer to ensure performance pliance. This device is manufactured using a GaInP HBT process, including, via holes through the substrate...