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CHA8212-99F - 25W X-Band High Power Amplifier

General Description

8.5-11.5GHz.

Power Added Efficiency.

gain exhibits more than 30dB.

Key Features

  • 8.5-11.5 GHz frequency range.
  • Linear Gain is 34 dB.
  • 44dBm Pout for +20dBm input power.
  • Associated PAE is 36% for +20dBm input power.
  • Associated Id is 2.5A for +20dBm input power.
  • DC bias: Vd=28Volts @Idq=0.84A.
  • Chip size 5.63x4.23x0.1mm Pout @8 dB compression Pae @8 dB compression Main Electrical Characteristics Tb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain PAE Power Added Efficiency (Pin=20 dBm) Pout Output Power (Pin=20 dBm) Min.

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Datasheet Details

Part number CHA8212-99F
Manufacturer United Monolithic Semiconductors
File Size 756.84 KB
Description 25W X-Band High Power Amplifier
Datasheet download datasheet CHA8212-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA8212-99F 25W X-Band High Power Amplifier GaN Monolithic Microwave IC Description The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band VD 8.5-11.5GHz. This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency. The small signal gain exhibits more than 30dB. The overall power supply is of 28V/0.84A (quiescent current). STG1 STG2 STG3 This circuit is a very versatile amplifier for IN OUT high performance systems. The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems. The part is developed on a robust 0.25µm VG gate length GaN HEMT process and is available as a bare die. Main Features ■ 8.5-11.