CHA8212-99F Datasheet 25w X-band High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA8212-99F 25W X-Band High Power Amplifier GaN Monolithic Microwave.

Datasheet Details

Part number	CHA8212-99F
Manufacturer	United Monolithic Semiconductors
File Size	756.84 KB
Description	25W X-Band High Power Amplifier
Datasheet	CHA8212-99F-UnitedMonolithicSemiconductors.pdf

The CHA8212-99F is a three-stage GaN High Power Amplifier in the frequency band VD 8.5-11.5GHz.

This HPA typically provides 25W of output power associated to 36% of Power Added Efficiency.

The small signal gain exhibits more than 30dB.

8.5-11.5 GHz frequency range.
Linear Gain is 34 dB.
44dBm Pout for +20dBm input power.
Associated PAE is 36% for +20dBm input power.
Associated Id is 2.5A for +20dBm input power.
DC bias: Vd=28Volts @Idq=0.84A.
Chip size 5.63x4.23x0.1mm Pout @8 dB compression Pae @8 dB compression Main Electrical Characteristics Tb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain PAE Power Added Efficiency (Pin=20 dBm) Pout Output Power (Pin=20 dBm) Min.

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