CHA8212-99F
CHA8212-99F is 25W X-Band High Power Amplifier manufactured by United Monolithic Semiconductors.
25W X-Band High Power Amplifier
GaN Monolithic Microwave IC
Description
The CHA8212-99F is a three-stage GaN
High Power Amplifier in the frequency band
8.5-11.5GHz. This HPA typically provides
25W of output power associated to 36% of
Power Added Efficiency. The small signal gain exhibits more than 30dB. The overall power supply is of 28V/0.84A (quiescent current).
STG1
STG2
STG3
This circuit is a very versatile amplifier for IN
OUT high performance systems.
The circuit is dedicated to defence applications and well suited for a wide range of microwave applications and systems.
The part is developed on a robust 0.25µm
VG gate length GaN HEMT process and...
