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CHA8252-99F - 10W K-Band High Power Amplifier

General Description

17.3-20.3GHz.

Power Added Efficiency.

gain exhibits more than 31dB.

Key Features

  • 17.3-20.3 GHz frequency range.
  • Linear Gain is 31dB.
  • 40.5dBm Pout for +16dBm input power.
  • Associated PAE is more than 35% for +16dBm input power.
  • Associated Id is 1.8A for +16dBm input power.
  • DC bias: Vd=18Volts @Idq=0.3A.
  • Chip size : 5x3.4x0.07mm Pout @8 dB compression PAE @8 dB compression Main Electrical Characteristics Tb. = +25°C Symbol Parameter Freq Frequency range Gain Linear Gain PAE Power Added Efficiency (Pin=16dBm) Pout Output Power (Pin=16d.

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Datasheet Details

Part number CHA8252-99F
Manufacturer United Monolithic Semiconductors
File Size 1.06 MB
Description 10W K-Band High Power Amplifier
Datasheet download datasheet CHA8252-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHA8252-99F 10W K-Band High Power Amplifier GaN Monolithic Microwave IC Description The CHA8252-99F is a three-stage GaN VD High Power Amplifier in the frequency band 17.3-20.3GHz. This HPA typically provides 10W of output power associated to 35% of Power Added Efficiency. The small signal gain exhibits more than 31dB. The overall power supply is 18V/0.3A (quiescent STG1 STG2 STG3 current). IN OUT This circuit is a very versatile amplifier for high performance systems. The circuit is dedicated to space applications and well suited for a wide range of microwave applications and systems. VG The part is developed on a robust 0.15µm gate length GaN on SiC HEMT process and is available as a bare die. Main Features ■ 17.3-20.