CHA8710a99F Description
V+ The CHA8710a99F is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency. In Out It is designed for a wide range of STG1 STG2 applications, from military to mercial munication systems. The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron...
CHA8710a99F Key Features
- Frequency range: 8.5-10.5GHz
- High output power: 25W
- High PAE: 44%
- Linear Gain: 28.5dB
- DC bias: Vd=25Volt @ Idq=0.75A
- Chip size 5.1x4.2x0.1mm
- Available in bare die
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec