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CHA8710a99F Datasheet 25w X-band High Power Amplifier

Manufacturer: United Monolithic Semiconductors

Overview: CHA8710a99F 25W X-Band High Power Amplifier GaN Monolithic Microwave.

General Description

V+ The CHA8710a99F is a two stage High Power Amplifier operating between 8.5 and 10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency.

In Out It is designed for a wide range of STG1 STG2 applications, from military to mercial munication systems.

The circuit is manufactured with a GaN HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.

Key Features

  • Frequency range: 8.5-10.5GHz.
  • High output power: 25W.
  • High PAE: 44%.
  • Linear Gain: 28.5dB.
  • DC bias: Vd=25Volt @ Idq=0.75A.
  • Chip size 5.1x4.2x0.1mm.
  • Available in bare die Main Electrical Characteristics Vd = +25V, Idq = 750mA, Pulse width=25µs & Duty cycle =10%, Tamb. = +25°C Symbol Parameter Min Typ Max Freq Frequency range 8.5 10.5 Gain Linear Gain 28.5 Pout Output Power 25 PAE Associated Power Added Efficiency 44 Unit GHz dB W % Ref. : DSCHA87.

More Datasheets from United Monolithic Semiconductors

Part Number Description
CHA8710-QDB 25W X-Band High Power Amplifier
CHA8012-99F C Band High Power Amplifier
CHA8054-99F 20W X-Band High Power Amplifier
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CHA8212-99F 25W X-Band High Power Amplifier
CHA8252-99F 10W K-Band High Power Amplifier
CHA8262-99F 27.5 - 31.5 GHz 12W HPA
CHA8352-99F 20W Ku-Band High Power Amplifier
CHA8610-99F 15W X Band High Power Amplifier

CHA8710a99F Distributor