CHA8710a99F
CHA8710a99F is 25W X-Band High Power Amplifier manufactured by United Monolithic Semiconductors.
25W X-Band High Power Amplifier
GaN Monolithic Microwave IC
Description
V+
The CHA8710a99F is a two stage High
Power Amplifier operating between 8.5 and
10.5GHz and providing typically 25W of saturated output power and 44% of power added efficiency.
In
Out
It is designed for a wide range of
STG1 STG2 applications, from military to mercial munication systems.
The circuit is manufactured with a GaN
HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography.
V-
It is available in chip form.
Main Features
- Frequency range: 8.5-10.5GHz
- High output power: 25W
- High PAE: 44%
- Linear Gain: 28.5dB
-...
