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CHA8710a99F
25W X-Band High Power Amplifier
GaN Monolithic Microwave IC
Description
V+
The CHA8710a99F is a two stage High
Power Amplifier operating between 8.5 and
10.5GHz and providing typically 25W of
saturated output power and 44% of power
added efficiency.
In
Out
It is designed for a wide range of
STG1 STG2
applications, from military to commercial
communication systems.
The circuit is manufactured with a GaN
HEMT process, 0.25µm gate length, via
holes through the substrate, air bridges and
electron beam gate lithography.
V-
It is available in chip form.
Main Features
■ Frequency range: 8.5-10.5GHz ■ High output power: 25W ■ High PAE: 44% ■ Linear Gain: 28.5dB ■ DC bias: Vd=25Volt @ Idq=0.75A ■ Chip size 5.1x4.2x0.
CHA8710a99F Datasheet
