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CHK8013-99F - 14W Power Transistor

General Description

The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.

Key Features

  • Wide band capability up to 10GHz.
  • Pulsed and CW operating modes.
  • GaN technology: High Pout & High PAE.
  • DC bias: VD up to 30V.
  • Chip size: 0.9x1.2x0.1mm.
  • RoHS N°2011/65.
  • REACh N°1907/2006 Main Electrical Characteristics Tb (1) = +25°C, pulsed mode, Freq = 6GHz, VDS = 30V, ID_Q = 0.18A Symbol Parameter Min Typ GSS Small Signal Gain 17 PSAT Saturated Output Power 14 PAE Max Power Added Efficiency 70 GPAE_MAX Associated Gain at Max PAE 11 (1) Tb: C.

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Datasheet Details

Part number CHK8013-99F
Manufacturer United Monolithic Semiconductors
File Size 867.54 KB
Description 14W Power Transistor
Datasheet download datasheet CHK8013-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHK8013-99F 14W Power Transistor GaN HEMT on SiC Description The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die form and requires an external matching circuitry. Main Features ■ Wide band capability up to 10GHz ■ Pulsed and CW operating modes ■ GaN technology: High Pout & High PAE ■ DC bias: VD up to 30V ■ Chip size: 0.9x1.2x0.1mm ■ RoHS N°2011/65 ■ REACh N°1907/2006 Main Electrical Characteristics Tb (1) = +25°C, pulsed mode, Freq = 6GHz, VDS = 30V, ID_Q = 0.