CHK8013-99F
Description
The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telemunication. The circuit is manufactured on a 0.25µm gate length Ga N HEMT technology on Si C substrate. It is proposed in a bare die form and requires an external matching circuitry.
Main Features
- Wide band capability up to 10GHz
- Pulsed and CW operating modes
- Ga N technology: High Pout & High PAE
- DC bias: VD up to 30V
- Chip size: 0.9x1.2x0.1mm
- Ro HS N°2011/65
- REACh N°1907/2006
Main Electrical Characteristics
Tb (1) = +25°C, pulsed mode, Freq = 6GHz, VDS = 30V, ID_Q = 0.18A
Symbol
Parameter
Min Typ
Small Signal Gain
PSAT
Saturated Output Power
Max Power Added Efficiency
GPAE_MAX Associated Gain at Max PAE
(1) Tb: Chip Backside Temperature
These values are derived from elementary power cell performances.
Max Unit d B W % d B
Ref. :...
