CHK8013-99F Datasheet 14w Power Transistor

Manufacturer: United Monolithic Semiconductors

Overview: CHK8013-99F 14W Power Transistor GaN HEMT on SiC.

Datasheet Details

Part number	CHK8013-99F
Manufacturer	United Monolithic Semiconductors
File Size	867.54 KB
Description	14W Power Transistor
Datasheet	CHK8013-99F-UnitedMonolithicSemiconductors.pdf

The CHK8013-99F is a 14W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telemunication.

The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrate.

Wide band capability up to 10GHz.
Pulsed and CW operating modes.
GaN technology: High Pout & High PAE.
DC bias: VD up to 30V.
Chip size: 0.9x1.2x0.1mm.
RoHS N°2011/65.
REACh N°1907/2006 Main Electrical Characteristics Tb (1) = +25°C, pulsed mode, Freq = 6GHz, VDS = 30V, ID_Q = 0.18A Symbol Parameter Min Typ GSS Small Signal Gain 17 PSAT Saturated Output Power 14 PAE Max Power Added Efficiency 70 GPAE_MAX Associated Gain at Max PAE 11 (1) Tb: C.