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CHK9014-99F - 55W Power Transistor

General Description

The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication.

Key Features

  • Wide band capability up to 13GHz.
  • Pulsed and CW operating modes.
  • GaN technology: High Pout & High PAE.
  • DC bias: VD up to 30V.
  • Chip size: 0.88x4.27x0.1mm.
  • RoHS N°2011/65.
  • REACh N°1907/2006 Main Electrical Characteristics Tref= +25°C, Pulsed mode, Freq=12GHz, VDS=30V, ID_Q=0.85A Symbol Parameter Min Typ GSS Small Signal Gain 13 PSAT Saturated Output Power 60 PAE Max Power Added Efficiency 50 GPAE_MAX Associated Gain at Max PAE 8 These values are.

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Datasheet Details

Part number CHK9014-99F
Manufacturer United Monolithic Semiconductors
File Size 840.33 KB
Description 55W Power Transistor
Datasheet download datasheet CHK9014-99F Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CHK9014-99F 55W Power Transistor GaN HEMT on SiC Description The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telecommunication. The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrate. It is proposed in a bare die form and requires an external matching circuitry. Main Features ■ Wide band capability up to 13GHz ■ Pulsed and CW operating modes ■ GaN technology: High Pout & High PAE ■ DC bias: VD up to 30V ■ Chip size: 0.88x4.27x0.1mm ■ RoHS N°2011/65 ■ REACh N°1907/2006 Main Electrical Characteristics Tref= +25°C, Pulsed mode, Freq=12GHz, VDS=30V, ID_Q=0.