CHK9014-99F Description
The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor. This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telemunication. The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrate.
CHK9014-99F Key Features
- Wide band capability up to 13GHz
- Pulsed and CW operating modes
- GaN technology: High Pout & High PAE
- DC bias: VD up to 30V
- Chip size: 0.88x4.27x0.1mm
- RoHS N°2011/65
- REACh N°1907/2006
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
CHK9014-99F Applications
- Wide band capability up to 13GHz