CHK9014-99F Datasheet 55w Power Transistor

Manufacturer: United Monolithic Semiconductors

Overview: CHK9014-99F 55W Power Transistor GaN HEMT on SiC.

Datasheet Details

Part number	CHK9014-99F
Manufacturer	United Monolithic Semiconductors
File Size	840.33 KB
Description	55W Power Transistor
Datasheet	CHK9014-99F-UnitedMonolithicSemiconductors.pdf

The CHK9014-99F is a 55W Gallium Nitride High Electron Mobility Transistor.

This product offers a general purpose and broadband solution for a variety of RF power applications such as radar and telemunication.

The circuit is manufactured on a 0.25µm gate length GaN HEMT technology on SiC substrate.

Wide band capability up to 13GHz.
Pulsed and CW operating modes.
GaN technology: High Pout & High PAE.
DC bias: VD up to 30V.
Chip size: 0.88x4.27x0.1mm.
RoHS N°2011/65.
REACh N°1907/2006 Main Electrical Characteristics Tref= +25°C, Pulsed mode, Freq=12GHz, VDS=30V, ID_Q=0.85A Symbol Parameter Min Typ GSS Small Signal Gain 13 PSAT Saturated Output Power 60 PAE Max Power Added Efficiency 50 GPAE_MAX Associated Gain at Max PAE 8 These values are.