Datasheet Details
| Part number | CHKA011aSXA |
|---|---|
| Manufacturer | United Monolithic Semiconductors |
| File Size | 772.22 KB |
| Description | 130W Power Packaged Transistor |
| Datasheet |
 CHKA011aSXA Datasheet
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General Description
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.
It offers general purpose and broadband solutions for a variety of RF power applications.
It is well suited for multi-purpose applications such as radar and telecommunication.
Key Features
- Wide band capability: up to 1.5GHz.
- Pulsed and CW operating modes.
- High power: > 130W.
- High Efficiency: > 70%.
- DC bias: Vd = 50Volt @ Id = 640mA.
- Package: Ceramic-Metal.
- MTTF > 106 hours @ Tj = 200°C VDS = 50V, ID_Q = 640mA, Pin=32dBm Pulsed mode (25µs, 10%) 170 22.5 160 Pout 22 150 21.5 140 21 130 Gain 20.5 120 20 110 19.5 100 19 90 18.5 80 PAE 18 70 17.5 60 17 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 Frequency (GHz) Main Ele.