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CHKA011aSXA - 130W Power Packaged Transistor

Datasheet Summary

Description

The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor.

It offers general purpose and broadband solutions for a variety of RF power applications.

It is well suited for multi-purpose applications such as radar and telecommunication.

Features

  • Wide band capability: up to 1.5GHz.
  • Pulsed and CW operating modes.
  • High power: > 130W.
  • High Efficiency: > 70%.
  • DC bias: Vd = 50Volt @ Id = 640mA.
  • Package: Ceramic-Metal.
  • MTTF > 106 hours @ Tj = 200°C VDS = 50V, ID_Q = 640mA, Pin=32dBm Pulsed mode (25µs, 10%) 170 22.5 160 Pout 22 150 21.5 140 21 130 Gain 20.5 120 20 110 19.5 100 19 90 18.5 80 PAE 18 70 17.5 60 17 0.4 0.41 0.42 0.43 0.44 0.45 0.46 0.47 0.48 Frequency (GHz) Main Ele.

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Datasheet Details

Part number CHKA011aSXA
Manufacturer United Monolithic Semiconductors
File Size 772.22 KB
Description 130W Power Packaged Transistor
Datasheet download datasheet CHKA011aSXA Datasheet
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Full PDF Text Transcription

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CHKA011aSXA Pout (W) & PAE (%) @ 32dBm Gain (dB) @ 32dBm 130W Power Packaged Transistor GaN HEMT on SiC packaged Description The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telecommunication. The CHKA011aSXA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. It is proposed in ceramic-metal flange power package, compliant with the RoHs N°2011/65 and REACH N°1907/2006 directives. Main Features ■ Wide band capability: up to 1.
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