CHKA011aSXA Overview
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telemunication.
CHKA011aSXA Key Features
- Wide band capability: up to 1.5GHz
- Pulsed and CW operating modes
- High power: > 130W
- High Efficiency: > 70%
- DC bias: Vd = 50Volt @ Id = 640mA
- Package: Ceramic-Metal
- MTTF > 106 hours @ Tj = 200°C
- 27 Oct 20
- Parc Mosaic
- 10, Avenue du Québec
CHKA011aSXA Applications
- Wide band capability: up to 1.5GHz