CHKA011aSXA Datasheet | United Monolithic Semiconductors

Pout (W) & PAE (%) @ 32dBm Gain (dB) @ 32dBm 130W Power Packaged Transistor GaN HEMT on SiC packaged Description The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications. It is well suited for multi-purpose applications such as radar and telemunication. The CHKA011aSXA is developed on a 0.5µm gate length GaN HEMT process. It requires an external matching circuitry. It is proposed in ceramic-metal flange power package, pliant with the RoHs N°2011/65 and REACH N°1907/2006 directives. Main Features - Wide band capability: up to 1.5GHz - Pulsed and...