CHKA011aSXA Overview
Description
The CHKA011aSXA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety of RF power applications.
Key Features
- Wide band capability: up to 1.5GHz
- Pulsed and CW operating modes
- High power: > 130W
- High Efficiency: > 70%
- DC bias: Vd = 50Volt @ Id = 640mA
- Package: Ceramic-Metal
- 10, Avenue du Québec
- 91140 VILLEBON-SUR-YVETTE
