Datasheet4U Logo Datasheet4U.com

CHM1290-99F - 20-30GHz Sub-Harmonic Mixer

General Description

The CHM1290-99F is a Multi-Function Circuit which integrates a self biased LO buffer amplifier and a sub harmonically diode mixer for 2LO suppression.

It is usable both for up conversion and down-conversion.

Key Features

  • Broadband performance: 20-30GHz.
  • 10dB conversion Loss.
  • 29dB 2LO to RF isolation.
  • -4dBm LO input power.
  • -3dBm input power 1dB compression.
  • Low DC consumption: 33mA@4.0V.
  • Chip size: 0.86x1.28x0.10mm Main Electrical Characteristics Tamb. = +25°C Symbol Parameter FRF RF frequency range FLO LO frequency range FIF IF frequency range Lc Conversion Loss Min Typ Max Unit 20 30 GHz 10 15 GHz DC 6 GHz 10 12 dB Ref. : DSCHM12900301 - 27 Oct 20 1/6 Sp.

📥 Download Datasheet

Datasheet Details

Part number CHM1290-99F
Manufacturer United Monolithic Semiconductors
File Size 418.01 KB
Description 20-30GHz Sub-Harmonic Mixer
Datasheet download datasheet CHM1290-99F Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
CHM1608U MULTILAYER CERAMIC BALUN TOKO
CHM2362PT N-Channel 60V MOSFET VBsemi
CHM3178JPT N-Channel Enhancement Mode Field Effect Transistor Chenmko Enterprise
CHM4060APAPT N-Channel Enhancement Mode Field Effect Transistor Chenmko Enterprise
CHM41A2NPT N-Channel Enhancement Mode Field Effect Transistor Chenmko Enterprise

Other Datasheets by United Monolithic Semiconductors

Part Number Description
CHM1290 20-30GHz SUB-HARMONICALLY PUMPED MIXER
CHM1290REF 20-30GHz SUB-HARMONICALLY PUMPED MIXER
CHM1291 25-32GHz Single Side Band Mixer
CHM1294 GaAs Monolithic Microwave IC
CHM1294-99F Self biased Single Side Band Mixer

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CHM1290-99F 20-30GHz Sub-Harmonic Mixer GaAs Monolithic Microwave IC Description The CHM1290-99F is a Multi-Function Circuit which integrates a self biased LO buffer amplifier and a sub harmonically diode mixer for 2LO suppression. It is usable both for up conversion and down-conversion. It is designed for a wide range of applications, typically commercial communication systems for broadband local access (LMDS). The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form.