Datasheet4U Logo Datasheet4U.com

CHP4511 - GaAs Monolithic Microwave

Datasheet Summary

Description

The CHP4511 is a 4-bit digital phaseshifter with an output single pole double through (SPDT) switch.

It is designed for 6 to 18GHz frequency range applications.

The backside of the chip is both RF and DC grounded.

Features

  • Broadband performances : 6-18GHz 22.5° phase step Losses < 15dB 22dBm input power at -1dBc I/O reversible. Adaptative SPDT 0/-5V control voltage Chip size: 4.62 x 3.0 x 0.1mm dB(S21) for 16 states Main Characteristics Tamb. = 25°C Symbol Parameter dB(S11)and dB(S22) for 16 Min Typ Max Fop Operating frequency range 6 18 G Small signal gain -15 -7 Poi1 Output power at 1dB compression 10 Vctrl Voltage control -5 0 ESD Protection: Electrostatic discharge sensitive device. Observe hand.

📥 Download Datasheet

Datasheet preview – CHP4511

Datasheet Details

Part number CHP4511
Manufacturer United Monolithic Semiconductors
File Size 427.95 KB
Description GaAs Monolithic Microwave
Datasheet download datasheet CHP4511 Datasheet
Additional preview pages of the CHP4511 datasheet.

📁 Similar Datasheet

  • CHP - High Stability Resistor Chips (Vishay Intertechnology)
  • CHP0502 - High Stability Resistor (Vishay Intertechnology)
  • CHP0505 - High Stability Resistor (Vishay Intertechnology)
  • CHP0603 - Ultra-High Power Chip Resistors (BOURNS)
  • CHP0603 - High Stability Resistor (Vishay Intertechnology)
  • CHP0705 - High Stability Resistor (Vishay Intertechnology)
  • CHP0805 - Ultra-High Power Chip Resistors (BOURNS)
  • CHP0805 - High Stability Resistor (Vishay Intertechnology)
  • CHP1005 - High Stability Resistor (Vishay Intertechnology)
  • CHP1010 - High Stability Resistor (Vishay Intertechnology)
Other Datasheets by United Monolithic Semiconductors

Full PDF Text Transcription

Click to expand full text
CHP4511 RoHS COMPLIANT 6-18GHz Phase-shifter GaAs Monolithic Microwave IC Description The CHP4511 is a 4-bit digital phaseshifter with an output single pole double through (SPDT) switch. It is designed for 6 to 18GHz frequency range applications. The backside of the chip is both RF and DC grounded. The circuit is manufactured with a Power pHEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. _ __ A C DE I/O 180° 90° 45° 22.5° _ AB _ E Typical on wafer measurements O/I 1 O/I 2 Main Features Broadband performances : 6-18GHz 22.5° phase step Losses < 15dB 22dBm input power at -1dBc I/O reversible. Adaptative SPDT 0/-5V control voltage Chip size: 4.62 x 3.0 x 0.
Published: |